Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication

Sawdai, D.; Pavlidis, D.; Cui, Dai

doi:10.1109/16.772468

Cited by 32 publications

(13 citation statements)

References 10 publications

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“…The epitaxial layer consists of 5 nm of SiN (in-situ passivation), 23 nm of Al 0.3 Ga 0.7 N, 1.8 lm of GaN, and the silicon substrate thickness is 300 lm. The ohmic contacts (R c ¼ 0.4 X mm) 21 were formed by fast annealing Ti/Al/Ni/Au metal layers at 900 C, then the device is isolated by ion implantation (He þ ). Due to the aspect ratio between the recess line depth (45 nm) and thickness (50 nm), specific technological steps to achieve these dimensions have been developed, mainly on the definition of the resist and the etching conditions.…”

mentioning

confidence: 99%

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Sangare

Ducournau

Grimbert

et al. 2013

Journal of Applied Physics

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The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.

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mentioning

confidence: 99%

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Sangare

Ducournau

Grimbert

et al. 2013

Journal of Applied Physics

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“…In order to further understand the effect of WO 3 interlayer on the R s of solar cells. A transmission line measurement (TLM) method is conducted to measure the contact resistance between the PEDOT:PSS film and the Ag electrodes [26]. The detailed TLM method is described in the Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3 thin interlayer

et al. 2015

Nano Energy

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“…The barrier resistance is combined with the ohmic resistivities to produce the net resistance R(V ) expression for the sample in (6), where j is used in the variable subscripts as either p or n referring to the positive or negative pad, respectively, A cj is the areas of the contact, G l j is the current crowding scaling factor [8], [26], [28], ρ Si , is the resistivity for the silicon sample ρ c is the ohmic contact resistivity, l cj is the length of the contact in parallel with current flow, α j is the current crowding characteristic ratio, and t Si is the thickness of the silicon sample perpendicular to the contact surface Integrating the inverse resistance over the voltage gives an expression in (7) that may be fit to a measured I -V curve…”

Section: B Electrical Modelmentioning

confidence: 99%

Engineering Electrical Interfaces to Silicon via Indium Solder

Panas

Culpepper

2015

IEEE Trans. Electron Devices

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This paper provides engineering models of a simple and robust approach for creating electrical connections to silicon using reduced temperature (<200°C substrate) soldering. This removes a significant hurdle to the fabrication of high performance, custom silicon piezoresistors. The approach focuses on reducing the resistance of diodes that are undergoing reverse bias behavior, commonly considered to be unacceptable for electrical connections. Reverse bias Schottky barrier analytical models based on quantum mechanical first principles are developed to explain how the behavior is affected by doping, soldering temperature, and geometry. This understanding is encapsulated within parametric models that enable rapid design and optimization of the electrical contacts to silicon. Using this model, one may design contacts for practical applications that do not require the conventional microfabrication processing or the high-temperature processing. Indium solder is found to be the best solder for this process, with ohmic contact resistances of ≈1 -cm 2 for 110 p-type wafers at 10 17 cm −3 doping.

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Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication

Cited by 32 publications

References 10 publications

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3 thin interlayer

Engineering Electrical Interfaces to Silicon via Indium Solder

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