High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3 thin interlayer

Mu, Xinhui; Yu, Xuegong; Xu, Dikai; Shen, Xiaojing; Xia, Zhouhui; He, Hang; Zhu, Haiyan; Xie, Jiangsheng; Sun, Baoquan; Yang, Deren

doi:10.1016/j.nanoen.2015.06.015

Cited by 46 publications

(30 citation statements)

References 27 publications

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“…Transition metal oxides (TMOs), conjugated macromolecule, carbon nanotube (CNT), graphene, copper iodide (CuI), etc. have generated intensive studies as potential alternatives to replace a‐Si:H .…”

Section: Introductionmentioning

confidence: 99%

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Sun

Wang

Liu

et al. 2017

Physica Rapid Research Ltrs

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Transition metal oxides (TMOs)/silicon (Si) heterocontact solar cells are currently under intensive investigation due to their simple fabrication process and less parasitic light absorption compared to traditional heterocontact counterparts. Effective segregation of carriers which is related to carrier‐selective heterocontact is crucial for the performance of photovoltaic devices. Molybdenum oxide (MoOx, x ≤ 3), with a wide bandgap of ∼3.24 eV as well as defect bands derived from oxygen vacancies located inside the band gap, has been introduced to integrate with n‐type Si (n‐Si) as hole selective contact. Here, we utilize a stepwise in situ deposition of MoOx to investigate its interaction with Si by X‐ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. A strong inversion layer originating from a charge transfer process is demonstrated in the n‐Si surface region upon MoOx contact characterized by XPS, UPS, capacitance–voltage (C–V), and minority charge carrier lifetime mapping measurements. A dopant‐free heterocontact is built within n‐Si with a high built‐in potential (Vbi) of ∼0.80 V which benefits for acquiring a high open circuit voltage (Voc). These results give a detailed interpretation on the carrier transport mechanism of MoOx/n‐Si heterocontact and also pave a new route toward fabricating high efficiency, low‐cost solar cells.

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Section: Introductionmentioning

confidence: 99%

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Sun

Wang

Liu

et al. 2017

Physica Rapid Research Ltrs

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“…In parallel, the development of thin-film and dye-sensitized/organic photovoltaics has introduced novel materials with excellent optoelectronic properties that could substitute standard silicon dopants. Such materials have recently been reported in conjunction with p-and n-type c-Si, including organic polymers (PEDOT:PSS [2], P3HT [3]), transparent conductive oxides (ZnO [4]), transition metal oxides (TiO2 [5], MoO3 [6], WO3 [7]) or their combination [8,9], reaching power conversion efficiencies as high as 18.8% [10] for MoO3/n-type c-Si heterojunctions. A distinctive attribute of these materials is their preferential conductivity for one kind of charge carrier (i.e., holes) while blocking the other kind (electrons), aiding in the separation of photogenerated carriers [11].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

et al. 2015

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During the last decade, transition metal oxides have been actively investigated as hole-and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3) with high work functions (>5 eV) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~10 9 Ω/sq), although lower values (~10 4 Ω/sq) were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich) layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV) and conversion efficiency (12.7%), followed by MoO3 (581 mV, 12.6%) and WO3 (570 mV, 11.8%). A short-circuit current gain of ~0.5 mA/cm 2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

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“…These issues have motivated studies to search for alternative new functional materials and simplified deposition technologies, whereby we can directly form high quality of heterojunctions with c‐Si substrates in a dopant‐free manner. During the past 5 years, dopant‐free HSCs with hole‐selective transport materials (e.g., molybdenum oxide (MoO x ), tungsten oxide (WO x ), vanadium oxide (V 2 O x ), and poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)) and electron‐selective transport materials (e.g., titanium dioxide (TiO 2 ), magnesium oxide (MgO x ), and magnesium fluoride (MgF x )) have already been implemented on c‐Si absorbers and promising progress has been achieved.…”

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confidence: 99%

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

Ling

Gao

et al. 2017

Solar RRL

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Crystalline silicon (c‐Si) heterojunction solar cells featuring dopant‐free and carrier‐selective contacts have drawn considerable attention due to their potential in achieving high efficiency with extremely simple fabrication procedures. Here, a low‐temperature thermal oxidation process is developed to fabricate a titanium dioxide (TiO2) ultrathin layer directly from a titanium (Ti) film that was predeposited onto Si substrates, leading to a surface recombination velocity as low as 15 cm s−1. Detailed interfacial and structural characterizations show that the excellent contact passivation property was mainly attributed to the amorphous nature of TiO2 and the presence of a Ti‐contained SiOx interlayer. By applying this ultrathin TiO2 layer as a passivating‐contact layer, test heterojunction solar cells employing a core structure of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n‐Si/TiO2 obtained an efficiency as high as 14.6% (only 13.0% for the reference device), demonstrating the potential for applications of this thermal oxidation‐derived TiO2 layer in dopant‐free heterojunction solar cells.

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High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3 thin interlayer

Cited by 46 publications

References 27 publications

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

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High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3 thin interlayer

Cited by 46 publications

References 27 publications

Investigation of MoOx/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Investigation of MoOx/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

TiO2 Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

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Product

Resources

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Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells