Enhanced resistance switching stability of transparent ITO/TiO ₂ /ITO sandwiches

Abstract

We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400–800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

“…Regarding the role of the bottom electrode in the resistive switching process, Yang et al reported that ITO can act as a source or reservoir of oxygen ions (O 2À ) and oxygen vacancies. 45 Hence, under the application of negative bias on the top electrode, a drift of O 2À towards the bottom electrode (ITO) can be expected. Simultaneously, the drift of positive ions, such as V 2þ O , may take place towards the top electrode, and they accumulate near the top electrode-oxide interface.…”

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

“…To explain the electrical behavior and electrode dependence in our RS memory devices, we note the following: it has been reported that ITO, which is used as bottom electrode in all our devices, acts as a source or reservoir of oxygen ions (O 2À ) and oxygen vacancies. 21 Hence, under the application of a positive bias on the top electrode, migration of the O 2À towards the Al/SnO interface is expected and as a result Al should become partially oxidized at the Al/SnO interface via an oxidation process (Al þ O 2À ! AlO x ), leading to the formation of very thin AlO x interfacial barrier layer, as illustrated in Fig.…”

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

“…Compared with the reported data, 1,[15][16][17][18][19] in addition to the small set/reset voltages, the proposed transparent ITO/ ACG/ITO memories also possess relative good performance in ON/OFF ratio and retention time. 1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented.…”

“…1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented. The Al-chelated gelatin biomaterial memory with a transmittance of 83% at 550 nm, an ON/OFF current ratio of more than 10 5 , bipolar resistive switching, and the set voltage of around À0.5 V can be achieved.…”