Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Chang, Yu‐Chi; Wang, Yeong-Her

doi:10.1063/1.4916028

Cited by 28 publications

(11 citation statements)

References 17 publications

(19 reference statements)

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“…On the other hand, with the ever-increasing concerns for healthcare, medicine and environments, the development of biocompatible, biodegradable and environmentally friendly electronics, the so-called green electronics, has become a pressing issue and a hot research topic for both academia and industry [9,10]. Owing to the merits of wide availability, flexibility, printable capability, and easy process and low cost [11,12], many types of biomaterials, such as DNA [13], protein [10,14,15], nucleobases [16], paper [17,18] and gelatin [19,20], have been explored for the fabrication of various green electronic devices, as well as memristors with the simple Metal-Insulator-Metal (MIM) sandwich structure [20]. We have also demonstrated a type of biocompatible transitional memristors using soluble albumen dielectric layer and tungsten (W) and magnesium (Mg) as the electrodes [13], and showed their potential for transitional implants or medical application.…”

Section: Introductionmentioning

confidence: 99%

“…Gelatin is a biomaterial obtained from animal skins, bones etc, and it has a quasi-reversible water dissolving property [21]. Recent work has shown that gelatin could be a suitable dielectric material for the fabrication of memristors with good properties [19,20], but very limited work has been done for in-depth understanding of the device properties and process influence, and more work is needed before its application. The working mechanism of the devices is still not clear, and the repeatability, reliability and stability of the devices are yet to be investigated.…”

Section: Introductionmentioning

confidence: 99%

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Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

Xuan

Liu

et al. 2018

IEEE Trans. Nanotechnology

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Crossbar structural resistive switching devices (memristors) are fabricated using biomaterial gelatin film as the dielectric layer. The performance of the devices and the effects of gelatin film thickness and baking temperature are investigated. Results show that the optimal gelatin film thickness for the memristors is ~80 nm and baking temperature ~105 o C. The optimized memristors show a bipolar resistive switching behavior with the resistance ratio between the high resistance state and low resistance state over 10 2 , the retention time over 10 6 sec without any obvious deterioration, and excellent stability and reliability, demonstrating its good potential for applications. A conductive atomic force microscopy is used to study the conductivity of the gelatin films under various biases, and the results indicate that the conductive filaments are responsible for the resistive switching behavior of the gelatin-based memristors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

Xuan

Liu

et al. 2018

IEEE Trans. Nanotechnology

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“…The device was first activated by applying a positive bias voltage of 5 V with a compliance current of 2 mA, then sweeping the device around 5 V to −5 V to reset the device at −2 V and set it at 2.1 V. Whereas, the device without ZNs that set at 3.9 V and reset at −3.5 V. Thus, lower operating voltage realized in Al/GOZNs/ITOPET due to the embedded ZNs [228]. [205], [237]- [252]. But, ZnO is attractive to many optoelectronic processes, also possesses a high absorption rate in the ultraviolet (UV) range.…”

Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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“…Some proteins such as silk fibroin (SF), ferritin, keratin, and collagen have been developed as data storage memory devices and neuromorphic devices. [ 59–103 ]…”

Section: Introductionmentioning

confidence: 99%

Recent Progress of Protein‐Based Data Storage and Neuromorphic Devices

Wang

Qian

Huang

et al. 2020

Advanced Intelligent Systems

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By virtue of energy efficiency, high speed, and parallelism, brain‐inspired neuromorphic computing is a promising technology to overcome the von Neumann bottleneck and capable of processing massive sophisticated tasks in the background of big data. The abilities of perceiving and reacting to events in artificial neuromorphic systems allow us to build the communicative electronic–biological interfaces to get closer to electronic life. Protein materials offer great application potentials in such a system due to their sustainability, low cost, controllable hierarchical structure, intrinsic biocompatibility, and biodegradability. Herein, a timely review of the development of protein‐based memories for data storage and neuromorphic computing is provided. Proteins’ unique mechanical, electronic, optical properties, and their broad applications are discussed. Then, the progress of protein‐based two‐terminal memristor and three‐terminal transistor‐type memory is reviewed, and their applications for data storage, logic circuit, and neuromorphic computing are introduced. Finally, the major challenges and outlook toward the future developing directions of protein‐based computing systems are pointed out.

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Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Cited by 28 publications

References 17 publications

Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Recent Progress of Protein‐Based Data Storage and Neuromorphic Devices

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