Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

Liu, Li-Jung; Chang‐Liao, Kuei‐Shu; Jian, Yu; Cheng, Jya‐Wei; Wang, Tien-Ko; Tsai, Ming-Jinn

doi:10.1109/led.2012.2206069

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…The thin Si-cap layer is helpful for suppressing the outdiffusion of Ge atoms and forming the SiO 2 tunneling layer with better interface quality. [9] A better interface between the SiO 2 tunneling layer and the Si-cap layer is obtained when compared with that formed by directly oxidizing the SiGe layer.…”

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confidence: 99%

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Hou¹,

Wang²,

Yao³

et al. 2018

Chinese Phys. Lett.

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We propose and investigate a novel metal/SiO2/Si3N4/SiO2/SiGe charge trapping flash memory structure (named as MONOS), utilizing SiGe as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of SiGe during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at +11 V for 100 𝜇s. Meanwhile, the memory device exhibits a large memory window of ∼7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 10 4 s' retention. In addition, the leakage current density is lower than 2.52 × 10 −7 A•cm −2 below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si3N4 charge trapping layer and the better quality of the interface between the SiO2 tunneling layer and the SiGe buried channel. Therefore, the application of the SiGe buried channel is very promising to construct 3D charge trapping NAND flash devices with improved operation characteristics.

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confidence: 99%

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Hou¹,

Wang²,

Yao³

et al. 2018

Chinese Phys. Lett.

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“…Furthermore, the tunneling electricfield strength for memory devices increases with the Ge content in the channel. [7] Liu et al [6] have reported charge-trapping flash memory devices with a SiGe-buried channel, and their experimental results proved to have a significant improvement on programming and erasing speed by employing the SiGe-buried channel. Moreover, Zhang et al [8] have also investigated the remarkable charge-trapping behavior of HfO 2 /Al 2 O 3 /HfO 2 multi-layered structure based on a molybdenum disulphide channel.…”

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confidence: 99%

“…where 𝑋 TL (3 nm), 𝑋 CTL (7 nm) and 𝑋 BL (6 nm) represent the thickness of the tunneling layer, charge trapping layer and blocking layer, respectively, 𝜀 OX (3.9), 𝜀 Al2O3 (7) and 𝜀 HfO2 (25) correspond to the relative dielectric constants of SiO 2 , Al 2 O 3 and HfO 2 , respectively. The calculated EOT by Eq.…”

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confidence: 99%

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Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- κ Dielectrics and SiGe Epitaxial Substrates

Hou

Wang

Xiang

et al. 2017

Chinese Phys. Lett.

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A novel high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ∼4 V, a small leakage current density of ∼2 × 10−6 Acm−2 at a gate voltage of 7 V, a high charge trapping density of 1.42 × 1013 cm−2 at a working voltage of ±10 V and good retention characteristics are observed. Furthermore, the programming ( at 10 V for 10 μs) and erasing speeds ( at −10 V for 10 μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.

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Embedded Flash and EEPROM for Smart IoT

2018

Memories for the Intelligent Internet of Things

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Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

Cited by 9 publications

References 15 publications

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- κ Dielectrics and SiGe Epitaxial Substrates

Embedded Flash and EEPROM for Smart IoT

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