Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- κ Dielectrics and SiGe Epitaxial Substrates

Abstract

A novel high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ∼4 V, a small leakage current density of ∼2 × 10−6 Acm−2 at a gate voltage of 7 V, a high charge trapping density of 1.42 × 1013 cm−2 at a working voltage of ±10 V and good retention characteristics are observed. Furthermore, the programming ( at 10 V for 10 μs) and erasing speeds ( at −10 V for 10 μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.

Improving Retention Properties of ALD-AlxOy Charge Trapping Layer for Non-Volatile Memory Application

“…The obtained results are comparable to the devices having different charge trap layer configuration. [19][20][21] Also, the observed window is improved than the device having a SiN x trapping layer. During the programming phase, the electrons get trapped in the dielectric layer and are difficult to jump from the trap layer due to insufficient negative voltage as reported elsewhere.…”

The Effect of Thermal Treatment Induced Performance Improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure

“…Thereafter, the equivalent oxide thickness (EOT) of the memory device is calculated from the following equation: 24…”

First-Principles Investigation of Morphological Evolution of Tungsten Growth on Alumina Surfaces: Implications for Thin-Film Growth

“…Al 2 O 3 is widely used as a high-κ dielectric oxide that lowers the electric field across the blocking oxide and reinforces the electric field across the tunneling oxide, resulting in enhanced speed and reduced applied voltage and producing a program/erase mechanism for memory devices. , …”