Enhanced n-type dopant solubility in tensile-strained Si

Bennett, Nick; Radamson, Henry H.; Beer, C.S.; Smith, Andrew J.; Gwilliam, R.; Cowern, N.E.B.; Sealy, B.J.

doi:10.1016/j.tsf.2008.08.072

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…From figure 4 we see that compared to P:Si δ-layers fabricated under the same conditions on unstrained Si(100) (red square) the maximum carrier density achievable in sSOI δ-layers is higher. Improvement in donor activation due to the presence of strain has been observed previously in Sb and As doped silicon, and has been explained by the counteraction of the residual strain against the lattice stress induced by substitutional dopants, thereby increasing the dopant's solubility [20,21]. However, for the δ-layers studied here the incorporation of P is limited by the saturated PH 3 coverage rather than the solubility limit [22] that is strain dependent.…”

Section: Carrier Activation and Segregationsupporting

confidence: 65%

Lithography and doping in strained Si towards atomically precise device fabrication

et al. 2014

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We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat sSOI(001) surface with a scanning tunnelling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process was investigated allowing us to pattern feature-sizes from several microns down to 1.3 nm. In parallel we have investigated the impact of strain on the electrical properties of P:Si δ-doped layers. Despite the presence of strain inducing surface variations in the silicon substrate we still achieve high carrier densities (>1.0 × 10(14) cm(-2)) with mobilities of ∼100 cm(2) V(-1) s(-1). These results open up the possibility of a scanning-probe lithography approach to the fabrication of strained atomic-scale devices in silicon.

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Section: Carrier Activation and Segregationsupporting

confidence: 65%

Lithography and doping in strained Si towards atomically precise device fabrication

et al. 2014

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“…Suvar et al [30] inserted 30-nm undoped Si spacer layers between P-doped Si and SiGe to lower the P concentration at the interface by a factor of 4 (from 8 × 10 19 cm −3 to 2 × 10 19 cm −3 ), but the P doping peak cannot be eliminated. Bennett et al [31] have studied the effect of strain on n-type doping in Si. The solid solubility of doping was increased by introducing tensile strain in Si.…”

Section: Introductionmentioning

confidence: 99%

“…Bennett et al . [ 31 ] have studied the effect of strain on n-type doping in Si. The solid solubility of doping was increased by introducing tensile strain in Si.…”

Section: Introductionmentioning

confidence: 99%

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Lin

et al. 2020

Nanoscale Res Lett

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Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/Si is commonly grown and processed to form vertical transistors. In this work, the P-incorporation in Si/SiGe/Si and vertical etching of these MLs followed by selective etching SiGe in lateral direction to form structures for vGAAFET have been studied. Several strategies were proposed for the epitaxy such as hydrogen purging to deplete the access of P atoms on Si surface, and/or inserting a Si or Si0.93Ge0.07 spacers on both sides of P-doped Si layers, and substituting SiH4 by SiH2Cl2 (DCS). Experimental results showed that the segregation and auto-doping could also be relieved by adding 7% Ge to P-doped Si. The structure had good lattice quality and almost had no strain relaxation. The selective etching between P-doped Si (or P-doped Si0.93Ge0.07) and SiGe was also discussed by using wet and dry etching. The performance and selectivity of different etching methods were also compared. This paper provides knowledge of how to deal with the challenges or difficulties of epitaxy and etching of n-type layers in vertical GAAFETs structure.

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