Enhanced inverted organic solar cell performance by post-treatments of solution-processed ZnO buffer layers

Lin, Zhenhua; Chang, Jingjing; Jiang, Changyun; Zhang, Jie; Wu, Jishan; Zhu, Chunxiang

doi:10.1039/c3ra46702c

Cited by 42 publications

(29 citation statements)

References 28 publications

(34 reference statements)

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“…The transmittance of the 60 nm‐thick ZnO film without the Ni film shows a maximum of 91% at 380 nm. This is consistent with the result that the visible light transmittance of a typical ZnO film is more than 80% . However, as the thickness of the Ni interlayer increased from 2.0 to 8.0 nm, the optical transmittances of the ZnO/Ni/ZnO MS films decreased proportionally from 86% to 55%, respectively.…”

Section: A Comparison Of the Important Performance Parameters Betweensupporting

confidence: 91%

Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

Kim

Baek

Lee

2020

Physica Rapid Research Ltrs

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The surface plasmon effect of Ni thickness on the optical and electrical properties of ZnO/Ni/ZnO multilayer structure (MS) ultraviolet photodetectors (PDs) is investigated. In general, ZnO/Ni/ZnO MS can be used as a transparent conductive oxide. As the thickness of the Ni thin interlayer increases from 0 to 8 nm, the optical transmittance of the ZnO/Ni/ZnO MS‐PDs decreases from 90.9% to 54.4%. The optical absorptions of the Ni/ZnO and ZnO/Ni/ZnO MS films increase with a 2.0 nm‐thick Ni film. In addition, despite depositing a Ni film on ZnO, the maximum photoluminescence (PL) intensity is obtained from the 2.0 nm‐thick Ni on the ZnO film. However, the optical absorption and PL band‐edge emission of ZnO/Ni/ZnO MS‐PDs decrease gradually with increasing Ni film thickness (>2.0 nm). Thus, this optical improvement of ZnO/Ni/ZnO can be caused by the surface plasmon effect, which leads to an increase in the number of photogenerated carriers in ZnO/Ni/ZnO MS‐PDs. Therefore, the higher photoresponsivity (19.5 mA W−1) and external quantum efficiency (6.5%) of the ZnO/Ni/ZnO MS‐PDs are achieved with a 2.0 nm‐thick Ni interlayer compared with ZnO single‐layer PDs.

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Section: A Comparison Of the Important Performance Parameters Betweensupporting

confidence: 91%

Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

Kim

Baek

Lee

2020

Physica Rapid Research Ltrs

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“…During the post annealing process, the annealing environment, such as humidity and vacuum, can also affect the electrical property of ZnO CBL to some extent. 168 Lin et al…”

Section: Zno Cbls Fabricated With Sol-gel Processingmentioning

confidence: 99%

“…168 Besides the annealing temperature and annealing environment, the concentration of ZnO precursor is another key factor largely affecting the quality on ZnO CBLs derived from a sol-gel route. In general, a relatively low sol concentration (∼0.1-0.3 ᴍ) is more prone to lead to a ZnO film with high quality, reflecting on denser film, lower surface roughness, and higher transmittance.…”

Section: Zno Cbls Fabricated With Sol-gel Processingmentioning

confidence: 99%

ZnO cathode buffer layers for inverted polymer solar cells

Liang

Zhang

Jiang

et al. 2015

Energy Environ. Sci.

286

218

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This article provides an overview on the design, fabrication and characterization of the most widely used cathode buffer layers (CBLs) constructed with pristine zinc oxide (ZnO), doped-ZnO, and ZnO-based composites as well as the surface modified ZnO-based CBLs for the improvement of power conversion efficiency (PCE) and long-term device stability of inverted polymer solar cells (PSCs). To achieve high PCE in inverted PSCs, the selection of an appropriate material to form the high quality CBL so as to optimize the electron collection and transport is particularly important. Among the different materials for CBL in inverted PSCs, ZnO has attracted most extensive research in view of its relatively high electron mobility, optical transparency, ease synthesis with versatile morphologies via low cost solution methods at low temperatures, and being environmentally stable. The research has revealed that the electronic processes at the interface between ZnO CBL and polymer active layer play an important role in determining the solar cells performance, and such processes are related to the ZnO CBL in terms of its morphology, microstructure, doping and surface modification. This review attempts to give a general review to better understand the impacts of (1) morphology, (2) thickness, (3) nanostructures, (4) doping, (5) surface modification and (6) composition/hybrids of ZnO CBLs on the solar cells performance. The fundamental understanding of the rapid progress of interfacial engineering made in PSCs would also be beneficial to the development of perovskite solar cells due to similar energy level and device structures.Fig. 12 (a) Schematic illustration of device structure with ZnMgO CBL. (b) Energy levels of the components in the inverted PSCs with various ZMO CBLs. (c) Optical absorption spectra of ZMO films. The inset shows an increase in the bandgap of ZMO films with the increasing of Mg content (x). (d) J-V curve of the device with the ZMO ( x = 0.3) CBL. 48 Fig. 13 (a) Chemical structures of PTB7-Th, PC 71 BM and BisNPC60-OH, (b) Schematic illustration of the proposed cathode interlayer from XPS depth profile; (c) Energy levels diagram for ZnO, InZnO, ZnO-BisC60 and InZnO-BisC60 determined from ultraviolet photoelectron spectroscopy (UPS) and UV-Vis results and for all the components in the inverted PSCs.

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“…The transmittance spectra for the ZnO layers with different step schedules are shown in Figure 2b. The transmittance of both ZnO layers is more than 80% [11] and there is no significant difference between the layers throughout the entire visible region. Figure 3 shows the AFM images of the ZnO layer on patterned ITO glass with different step schedules of the spin-coating process.…”

Section: Resultsmentioning

confidence: 94%

Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

Kim

2019

Applied Sciences

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The present work shows the effect of the ZnO layer morphology on inverted quantum dot light-emitting diodes (QLEDs) using different spin-coating processes. In the inverted structure of ITO/ZnO/QDs/CBP/MoO3/Al, ZnO nanoparticles were used as the electron transport layer. The utilization of a two-step spin-coating process to deposit a ZnO layer on a patterned ITO glass substrate resulted in an increase in the surface roughness of the ZnO layer and a decrease in the luminance of the QLEDs. However, the current efficiency of the device was enhanced by more than two-fold due to the reduced current density. Optimization of the ZnO spin-coating process can efficiently improve the optical and electrical properties of QLEDs.

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Enhanced inverted organic solar cell performance by post-treatments of solution-processed ZnO buffer layers

Cited by 42 publications

References 28 publications

Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

ZnO cathode buffer layers for inverted polymer solar cells

Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

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