Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

Oh, Seongkeun; Kim, Jiwan

doi:10.3390/app9214539

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…The efficiency of QD-based light-emitting diodes (QD-LEDs) has been improved steadily over the past two decades, and one of the most important breakthroughs was made by employing a metal oxide semiconductor in the electron transport layer (ETL). Suitable energy levels and high electron mobility of metal oxide semiconductors led to efficient charge injection and transport, thereby resulting in notable progress in the luminescence efficiency of QD-LEDs [17][18][19][20]. Various types of metal oxide semiconductors have been employed and investigated, and among those metal oxide semiconductors, 2 of 9 zinc oxide (ZnO) has been the most widely employed because of their easy processability, excellent electrical properties, and transparency [21,22].…”

Section: Introductionmentioning

confidence: 99%

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

et al. 2020

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The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO2) bilayer stacks. The employment of SnO2 for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

et al. 2020

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“…Zinc oxide is one of the promising materials used in wide range applications due to its exceptional optical and electronic properties [1]. It is a material of high potential in solar cells, organic light emitting diodes, photocatalysis of organic compounds and gas sensors [2][3][4]. Furthermore, ZnO films are used in the modern electrical and optical systems and for products having low resistivity and transmittance performances [5].…”

Section: Introductionmentioning

confidence: 99%

Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering

Radjehi,

Aissani,

Djelloul

et al. 2023

Metall Mater Eng

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In this study, we aim to investigate the effect of zinc interstitials (Zni) and oxygen vacancies (VO) on the ZnO electrical conductivity. ZnO films were synthesized via DC magnetron sputtering process using pure Zn target in gases mixture of Ar/O2 = 80/17.5 (sccm). In order to improve the optical and electrical prosperities, the obtained films were subjected to air and vacuum annealing treatment. Several techniques such as field emission scanning electron microscopy (FESEM), Grazing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy, photoluminescence spectroscopy (PL) and UV-visible were used to study the influence of heat treatment on structural and physical properties of ZnO films. Electrical conductivity of ZnO thin films was determined by measuring the sheet resistance and thickness of the films. XRD results confirm the synthesis of annealed ZnO films of the hexagonal structure with a preferential orientation along the (002) plane. The average crystallite size is altered between 22.6 to 28.4 nm dependent on the plan orientation of the ZnO film. Morphology and crystallinity of the ZnO structure could efficiently control the transmittance, electrical resistivity and optical band gap. As deposited ZnO film showed a lower electrical resistivity of 2.72×10-3 Ωcm due to the Zn-rich conditions. Under vacuum annealing, a combination of low resistivity (1.17×10-2 Ωcm) and better optical transmittance (87 %) are obtained. ZnO films developed in this study with high transmittance and low resistivity and good electro-optical quality supports their use in transparent and conductive electrode applications. The plan presentation was visualized using Vesta, with the lattice parameter set as follows: a = b = 3.249 Å; c = 5.207 Å; α = β = 90°; γ = 120°. Based on the construction and optimization of primitive cells, the supercells were constructed and then optimized. Finally, (002) and (103) planes were cut and the planar supercell structure was constructed. In order to make a plane representation for the solid bulk with 10 Å of thickness.

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“…Colloidal quantum dots (QDs) have been widely investigated due to their attractive characteristics, such as high photoluminescence quantum yield, low driving voltage, narrow full width at half maximum of the emission spectra, high color purity, tunable emission color, and cost-effective fabrication. [1][2][3][4][5][6][7][8][9][10] These characteristics make QDs potential electroluminescence (EL) material in quantum-dot light-emitting devices (QDLEDs) and a promising candidate for nextgeneration wide-color-gamut displays and solid-state lighting applications. Depending on the size and composition of QDs, the quantum connement effect allows them to modulate the emissive color to cover wavelengths ranging from the ultraviolet (UV) region to the near-infrared (NIR) region.…”

Section: Introductionmentioning

confidence: 99%

Lifetime elongation of quantum-dot light-emitting diodes by inhibiting the degradation of hole transport layer

et al. 2021

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Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

Cited by 10 publications

References 13 publications

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering

Lifetime elongation of quantum-dot light-emitting diodes by inhibiting the degradation of hole transport layer

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