Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

Kim, Hee-Wung; Baek, Seung‐Hye; Lee, Sung‐Nam

doi:10.1002/pssr.201900685

Cited by 6 publications

(4 citation statements)

References 46 publications

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“…The increased oxygen‐related defects in the SG‐ZnO/ALD‐ZnO film may be due to the atmospheric conditions during high‐temperature annealing in the SG process. [ 33,34 ] These findings indicate that the ALD‐ZnO seed layer can improve the optical emission properties of the SG‐ZnO films. In particular, the band‐edge emission intensity of the O‐polar c ‐plane SG‐ZnO/ALD‐ZnO grown on the c ‐plane sapphire is higher than that of the nonpolar a ‐plane SG‐ZnO/ALD‐ZnO grown on the r ‐plane sapphire.…”

Section: Figurementioning

confidence: 91%

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Lee

Baek

Kim

et al. 2020

Physica Rapid Research Ltrs

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Oxygen‐polar (O‐polar) and nonpolar ZnO‐based UV photodetectors (PDs) are fabricated using a sol–gel (SG) method on polarity‐controlled ZnO seed layers grown by atomic layer deposition (ALD). O‐polar c‐plane and nonpolar a‐plane ZnO films grown using the SG process are obtained using ALD‐grown ZnO seed layers on c‐plane and r‐plane sapphire substrates, respectively. In addition, the photoluminescence intensity of the O‐polar c‐plane ZnO film is higher than that of the nonpolar a‐plane ZnO film owing to the introduction of the ZnO seed layer. Therefore, the resulting photocurrent of the O‐polar c‐plane ZnO PD is higher than that of the nonpolar a‐plane ZnO PD. Furthermore, regardless of the crystal polarity, the carrier concentration and the mobility of the ZnO film deposited using the SG method significantly increase because of the ZnO seed layer. In particular, the carrier concentration of the nonpolar a‐plane ZnO film is 2.5 times higher than that of the O‐polar c‐plane ZnO film. Therefore, the time‐dependent photoresponsivity of the nonpolar a‐plane ZnO PD is faster than that of the O‐polar c‐plane ZnO PD. These results indicate that the ZnO seed layers can effectively control the crystal polarity of ZnO films grown using the SG method.

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Section: Figurementioning

confidence: 91%

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Lee

Baek

Kim

et al. 2020

Physica Rapid Research Ltrs

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“…ZnO-based nanocomposites have good potential applications in solar cells [1], photoelectrical devices [2], energy storage [3,4], water splitting [5], supercapacitors [6], gas sensors [7][8][9][10][11], biosensors [12,13], photodetectors [14][15][16][17][18][19][20][21][22][23], photocatalysts [24][25][26][27][28][29][30][31][32][33][34][35][36][37], removal of toxic gases [38], and so on. Because ZnO is only active in the UV region, this led to low efficiency in the energy and environmental fields.…”

Section: Introductionmentioning

confidence: 99%

Strong Interface Interaction of ZnO Nanosheets and MnSx Nanoparticles Triggered by Light over Wide Ranges of Wavelength to Enhance Their Removal of VOCs

Ma,

Zhang,

Gao

et al. 2023

Coatings

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The characteristics of the surface and interface of nanocomposites are important for exerting multi-functional properties and widening interdisciplinary applications. These properties are mainly depending on the electronic structures of materials. Some key factors, such as the surface, interface, grain boundaries, and defects take vital roles in the contribution of desired properties. Due to the excellent sensitivity of the QCM (quartz crystal microbalance) device, the surface and interface features of the nanocomposite were studied with the aid of the gas-response of the sensors (Sensor’s Gas-Sensitivity) in this work. To make full use of the visible light and part of NIR, a ZnO/MnSx nanocomposite was constructed using hydrothermal synthesis for narrowing the bandgap width of wide bandgap materials. The results indicated that the absorbance of the resulting nanocomposite was extended to part of the NIR range due to the introduction of impurity level or defect level, although ZnO and MnS belonged to wide bandgap semiconductor materials. To explore the physical mechanism of light activities, the photoconductive responses to weak visible light (650 nm, etc.) and NIR (near-infrared) (808 nm, 980 nm, and 1064 nm, etc.) were studied based on interdigital electrodes of Au on flexible PET (polyethylene terephthalate) film substrate with the casting method. The results showed that the on/off ratio of ZnO/MnSx nanocomposite to weak visible light and part of NIR light were changed by about one to five orders of magnitude, with changes varying with the amount of MnSx nanoparticle loading due to defect-assisted photoconductive behavior. It illustrated that the ZnO/MnSx nanocomposite easily produced photo-induced free charges, effectively avoiding the recombination of electrons/holes because of the formation of strong built-in electrical fields. To examine the surface and interface properties of nanocomposites, chemical prototype sensor arrays were constructed based on ZnO, ZnO/MnSx nanocomposite, and QCM arrays. The adsorption response behaviors of the sensor arrays to some typical volatile compounds were examined under a similar micro-environment. The results exhibited that in comparison to ZnO nanosheets, the ZnO nanosheets/MnSx nanocomposite increased adsorption properties to some typical organic volatile compounds significantly. It would have good potential applications in photo-catalysts, self-cleaning films, multi-functional coatings, and organic pollutants treatment (VOCs) of environmental fields for sustainable development. It provided some reference value to explore the physical mechanism of materials physics and photophysics for photo-active functional nanocomposites.

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“…ZnO, with a wide direct band gap (3.37 eV) and excellent optoelectronic performance, has been regarded as a potential material to develop the UV photodetector. At present, one of the major challenges with the ZnO UV photodetector is its performance, including responsivity and response time [3,[5][6][7][8][9]. Many methods have been employed to enhance its performance, such as ionic doping, introducing 2D material and inserting a thin metal layer or nanoparticles, etc [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector

Song

Wang

et al. 2021

Semicond. Sci. Technol.

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As a potential optoelectronic material, the use of ZnO in ultraviolet (UV) photodetectors is attracting significant attention. In this study, aluminum (Al) nanoparticles of different content and ZnO films are sequentially sputtered to form ZnO/Al bilayer UV photodetectors. The responsivity of the ZnO/Al bilayer photodetector, with a maximum of 380.9 A W−1 at 320 nm and 5 V bias, is higher than that of the single-layer ZnO photodetector. The enhanced responsivity of the ZnO/Al bilayer UV photodetectors can be attributed to the local surface plasmon resonance effect and the introduction of oxygen vacancies. Meanwhile, the different size and distribution density of Al nanoparticles determines the different enhanced mechanisms. Our work provides a promising route to design and fabricate a high-performance photodetector.

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Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors

Cited by 6 publications

References 46 publications

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Strong Interface Interaction of ZnO Nanosheets and MnSx Nanoparticles Triggered by Light over Wide Ranges of Wavelength to Enhance Their Removal of VOCs

Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector

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