Enhanced fatigue-endurance of ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method

Abstract

The polarization fatigue behaviors of ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 (PSZT) thin films deposited on Pt-coated silicon wafers are investigated. Significantly enhanced fatigue endurance with increasing Sr doping and decreasing temperature is observed, and the almost fatigue-free performance up to 1010 switching cycles for PSZT (x=0.2) thin films at room temperature is identified. The dc-conductivity measurements suggest almost 20 times decreasing of the oxygen vacancy density as the Sr doping increases from x=0 to x=0.2. It is believed that the Sr-doping enhances the stability of oxygen ions and suppresses oxygen vacancies, consequently resulting in the improved fatigue endurance.

Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

“…As these films were deposited and annealed under the same condition, the observed difference in the microstructure is due to the substitution of Sr at the A-site. This observation was in contrast to the recent report on (Pb 1−x Sr x )(Zr 0.52 Ti 0.48 )O 3 films prepared by sol-gel process on the same type of substrate, where PZT films preferred the (1 0 0) orientation and this preference disappeared with Sr substitution [7].…”

“…Fatigue can be minimized either by using conductive oxide electrodes (e.g., RuO 2 ) that prevent space charge formation at the interfaces, or by addition of donor dopants (e.g., Nb, La in Pb(Zr x Ti 1−x )O 3 ) that reduce the oxygen vacancy concentration and allow increasing number of cycles to amazing 10 12 [5,6]. Strong cation-oxygen bond can be another way to reduce the oxygen vacancies and in this respect high stability associated with Sr-O bonding may be interesting to reduce oxygen vacancies [7]. In this work, we present Sr substitution in PZT and its influence on the microstructure and electrical properties.…”

“…Hence the Sr substitution of Pb improves the chemical stability of perovskite PZT structure and which in turn reduces the oxygen vacancies. This enhanced oxygen stability, and lower concentration and mobility of oxygen vacancy may be the reason for improved fatigue endurance in the PSZT films [7].…”

Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

“…Therefore, the investigation on Ba 2+ or Sr 2+ doped PZ AFE materials in thin film form should be more interesting. Moreover, it was reported by Wang et al [16,17] that the fatigue property of Pb(Zr,Ti)O 3 thin films could be improved by Ba 2+ or Sr 2+ dopants. Thus, it is reasonably expected that the fatigue against endurance of PZ-based AFE thin films could also be enhanced by Ba 2+ or Sr 2+ doping.…”

Probing fatigue in ferroelectric thin films with subnanometer depth resolution

“…Polarization fatigue represents the decrease of switchable polarization after repeated switching under an external alternating-current ͑ac͒ electric field. [1][2][3][4][5][6][7][8][9][10] It is the most challenging reliability issue for these ferroelectric components. Currently, the increasing accumulation of positively charged oxygen vacancies to the ferroelectric/electrode interfaces is theoretically assumed to be responsible for polarization fatigue.…”