Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol–gel process

“…It should be pointed out that the obtained current as a function of dc electric field includes leakage current and phase transition current. More detailed explanations on this were reported in our previous work [21]. The difference in J-E curves between the two PZO films indicates that sample PZO-1 has a smaller leakage current in contrast to sample PZO-2.…”

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

“…For the PZO film, current density had an obvious current peak around 300 kV/cm, which nearly correlated to the phase switching field. As the leakage current usually increases monotonically with the voltage, the current peak corresponding to negative resistance can be attributed to the domination of a displacive current, which itself is produced by the phase transition from antiferroelectric to ferroelectric; these findings are consistent with those in previous reports [ 28 , 29 ]. For ferroelectric materials, Krupanidhi et al pointed out that the ferroelectric polarization current can be ignored in relation to a time gap that is much larger than the domain switching speed [ 30 ].…”

A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

“…With 0≤x≤0. In addition to phase compositions and dielectric properties, the critical switching fields between AFE and FE of PZ AFEs were also influenced by Ba 2+ or Sr 2+ -doping [170]. For example, pure PZ, 5 95/5 ceramics during the FE-AFE phase transition induced by the application of 2.9 GPa [178].…”