Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol–gel process

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

“…For the PZO film, current density had an obvious current peak around 300 kV/cm, which nearly correlated to the phase switching field. As the leakage current usually increases monotonically with the voltage, the current peak corresponding to negative resistance can be attributed to the domination of a displacive current, which itself is produced by the phase transition from antiferroelectric to ferroelectric; these findings are consistent with those in previous reports [ 28 , 29 ]. For ferroelectric materials, Krupanidhi et al pointed out that the ferroelectric polarization current can be ignored in relation to a time gap that is much larger than the domain switching speed [ 30 ].…”

Improved energy storage performance of PbZrO3 antiferroelectric thin films crystallized by microwave radiation

“…[16][17][18] Besides, the W rec of AFE lms can also be improved by using special preparation methods and adjusting process parameters to obtain high-quality lms. [19][20][21][22][23] For example, an improved W rec of AFE lms was obtained by modifying chemical solution with Fig. 1 A schematic diagram for the energy storage of AFE materials.…”

“… 16–18 Besides, the W rec of AFE films can also be improved by using special preparation methods and adjusting process parameters to obtain high-quality films. 19–23 For example, an improved W rec of AFE films was obtained by modifying chemical solution with polyvinylpyrrolidone (PVP), which is due to the reduction of cracks in the films. 21 By controlling the deposition temperature in the process of pulsed laser deposition, the AFE films could be made more compact and form a more stable AFE phase, thus improving the W rec .…”

Phase Stability and Dual-Mode Photoluminescence Modulation in Er-Doped Lead Zirconate Titanate Antiferroelectrics

“…Moreover, in Figure c, the dielectric anomaly represents the Curie temperature ( T C ) at which the AFE O phase transits to the paraelectric cubic (PE C ) phase. As the Er 3+ content increases, T C gradually increases from 196 °C to 232 °C, which is due to the extra strain induced by the doping Er 3+ ions. , In summary, a temperature-electric field ( T–E ) phase diagram of PLZT - Er systems is given in Figure d, where the AFE/FE phase boundary moves forward in the high- T /high- E direction when the Er 3+ content is increased. This is because the doped Er 3+ ions can break the long-term order and stabilize the AFE phase, which is very similar to the effect of other element doping. , Nevertheless, Figure demonstrates good thermal stability of the x Er ceramic samples at least in the range from room temperature to 180 °C.…”

“…As the Er 3+ content increases, T C gradually increases from 196 °C to 232 °C, which is due to the extra strain induced by the doping Er 3+ ions. 33,34 In summary, a temperature-electric field (T−E) phase diagram of PLZT-Er systems is given in Figure 3d, where the AFE/FE phase boundary moves forward in the high-T/high-E direction when the Er 3+ content is increased. This is because the doped Er 3+ ions can break the long-term order and stabilize the AFE phase, which is very similar to the effect of other element doping.…”