2009
DOI: 10.1016/j.jallcom.2009.03.170
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Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

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Cited by 16 publications
(11 citation statements)
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“…It might be resulted from their different temperature dependences of ε and tan ı properties on the La-doped content [31]. For the films with x values ranging from 0 to 0.05, the dependences of dielectric properties on the La-doped content can be mainly explained by the fact that donor doping like La 3+ in the place of Pb 2+ is an effective way to reduce the concentration of intrinsic oxygen vacancies and compensate the holes formed due to lead vacancies [4,7]. A reduce of oxygen vacancies in the lattice makes domain wall motion easier, and thus reduced tan ı and increased ε values are obtained.…”
Section: Preferred Orientation Of the Filmsmentioning
confidence: 99%
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“…It might be resulted from their different temperature dependences of ε and tan ı properties on the La-doped content [31]. For the films with x values ranging from 0 to 0.05, the dependences of dielectric properties on the La-doped content can be mainly explained by the fact that donor doping like La 3+ in the place of Pb 2+ is an effective way to reduce the concentration of intrinsic oxygen vacancies and compensate the holes formed due to lead vacancies [4,7]. A reduce of oxygen vacancies in the lattice makes domain wall motion easier, and thus reduced tan ı and increased ε values are obtained.…”
Section: Preferred Orientation Of the Filmsmentioning
confidence: 99%
“…The addition of donor dopants such as La 3+ cation is an effective way in reducing the leakage current and improving the fatigue behavior of PZT thin films due to its role in diluting oxygen vacancy concentrations [4][5][6][7]. Studies also indicated that La doping could greatly tailor the electrical properties of PZT bulk ceramics and similar perovskite oxides [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…At present, materials such as Ba x Sr 1−x TiO 3 (BST), BaZr x Ti 1−x O 3 (BZT), PbZr x Ti 1−x O 3 (PZT), and Pb 1−x Ba x TiO 3 (PBT) systems have been intensively investigated [7][8][9][10][11][12][13]. Recently, Somiya et al [14] reported that Pb x Sr 1−x TiO 3 (PST) has better properties than BST.…”
Section: Introductionmentioning
confidence: 99%
“…Many methods have been developed to prepare PZT films and ceramics, such as radio frequency (RF) magnetron sputtering [3], pulsed laser deposition (PLD) [4], metal-organic chemical vapor deposition (MOCVD) [5], sol-gel [6][7][8][9][10][11], screen-print [12,13], chemical solution deposition [14], solid state process [15], etc. Among them, sol-gel is an attractive technique for fabricating PZT films due to its good compatibility with MEMS technology, precise control of the homogeneity of composition, ease of use and low cost for fabricating thin films with large area.…”
Section: Introductionmentioning
confidence: 99%