Enhanced Extraction Rates through Gap States of Molybdenum Oxide Anode Buffer

Dasgupta, Binayak; Goh, Wei Peng; Ooi, Zi En; Wong, Lai Mun; Jiang, Changyun; Ren, Yi; Tok, Eng Soon; Pan, Jisheng; Zhang, Jie; Chiam, Sing Yang

doi:10.1021/jp3114013

Cited by 46 publications

(34 citation statements)

References 61 publications

(115 reference statements)

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“…Thermally evaporated MoO x films were found to have WF at 5.4 eV, which aligns well with the highest occupied molecular orbital (HOMO) level of the spiro‐OMeTAD (see Figure d). Despite the strong n‐type nature and very low‐lying valence band, MoO x can extract holes from the adjacent organic semiconductor through oxygen vacancy–induced gap states close to its Fermi level . Concerning the metal layer, copper was employed instead of the conventional precious metals (Au, Ag) in order to develop a cost‐effective DMD structure that is also intrinsically stable with perovskite unlike Ag‐based contacts.…”

Section: Resultsmentioning

confidence: 99%

Nonprecious Copper‐Based Transparent Top Electrode via Seed Layer–Assisted Thermal Evaporation for High‐Performance Semitransparent n‐i‐p Perovskite Solar Cells

Giuliano

Cataldo

Scopelliti

et al. 2019

Adv Materials Technologies

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Semitransparent perovskite solar cells (ST‐PSCs) are highly attractive for applications in building‐integrated photovoltaics as well as in multijunction tandem devices. To fabricate high‐performance ST‐PSCs, suitable transparent top electrodes are strongly needed. Dielectric/metal/dielectric (DMD) multilayer structures have been shown to be promising candidates, though generally based on high‐value metals such as gold or silver, the latter causing also stability issues by reacting with perovskite. Here, a novel DMD transparent electrode based on nonprecious, less‐reactive copper is developed via thermal evaporation and used as a top anode in the fabrication of high‐performance semitransparent n‐i‐p perovskite solar cells, the best device yielding a power conversion efficiency as high as 12.5%. The DMD architecture consists of a gold‐seeded Cu thin film sandwiched between two MoO x dielectric layers. It is demonstrated that Cu self‐aggregation and diffusion into MoOx can be substantially limited by introducing an ultrathin (1.5 nm) Au seed layer, and conductive Cu films as thin as 9.5 nm can be achieved. A fine tuning of the perovskite layer thickness is also carried out to further enhance the device transparency up to a maximum average visible transmittance approaching 25%.

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Section: Resultsmentioning

confidence: 99%

Nonprecious Copper‐Based Transparent Top Electrode via Seed Layer–Assisted Thermal Evaporation for High‐Performance Semitransparent n‐i‐p Perovskite Solar Cells

Giuliano

Cataldo

Scopelliti

et al. 2019

Adv Materials Technologies

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“…26 Figures 6 (a) and (b) show the s-MoO x -treated and pristine AgNW TCEs after peeling the film repeatedly with the tape. 45,62 The work functions of the MoO x -treated AgNW TCEs were Figure S8 in the supporting information. As shown in Figure 6 (d), the R sheet of this film increased dramatically with double peeling procedures (from 4411 ohm/sq to 1.2 × 10 8 ohm/sq).…”

Section: Forward Scattered Light Haze Valuementioning

confidence: 99%

A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties

et al. 2015

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We demonstrate the fabrication of solution-processed MoOx-treated (s-MoOx) silver nanowire (AgNW) transparent conductive electrodes (TCEs) utilizing low-temperature (sub-100 °C) processes. The s-MoOx aggregates around the AgNW and forms gauze-like MoOx thin films between the mesh, which can effectively lower the sheet resistance by more than two orders of magnitude. Notably, these s-MoOx-treated AgNW TCEs exhibit a combination of several promising characteristics, such as a high and broad transmittance across a wavelength range of 400 to 1000 nm, transmission of up to 96.8%, a low sheet resistance of 29.8 ohm sq(-1), a low haze value of 0.90%, better mechanical properties against bending and adhesion tests, and preferable gap states for efficient hole injection in optoelectronic applications. By utilizing these s-MoOx-treated AgNW TCEs as the anode in ITO-free organic light emitting diodes, promising performance of 29.2 lm W(-1) and 10.3% external quantum efficiency are demonstrated. The versatile, multi-functional s-MoOx treatment presented here paves the way for the use of low-temperature, solution-processed MoOx as both a nanowire linker and a hole injection interfacial layer for future flexible optoelectronic devices.

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“…It affects the electronic structure of molybdenum oxide, and thereby the hole extraction efficiency, charge recombination at Mo(V) gap states, the series resistance [44], and the shunt resistance (in OPV) [26]. However, this work (Figure 2a) demonstrates a strong resemblance between the unmodified and Zr- or Sn-incorporated MoO x layers.…”

Section: Resultsmentioning

confidence: 91%

Steering the Properties of MoOx Hole Transporting Layers in OPVs and OLEDs: Interface Morphology vs. Electronic Structure

et al. 2017

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The identification, fine-tuning, and process optimization of appropriate hole transporting layers (HTLs) for organic solar cells is indispensable for the production of efficient and sustainable functional devices. In this study, the optimization of a solution-processed molybdenum oxide (MoOx) layer fabricated from a combustion precursor is carried out via the introduction of zirconium and tin additives. The evaluation of the output characteristics of both organic photovoltaic (OPV) and organic light emitting diode (OLED) devices demonstrates the beneficial influence upon the addition of the Zr and Sn ions compared to the generic MoOx precursor. A dopant effect in which the heteroatoms and the molybdenum oxide form a chemical identity with fundamentally different structural properties could not be observed, as the additives do not affect the molybdenum oxide composition or electronic band structure. An improved surface roughness due to a reduced crystallinity was found to be a key parameter leading to the superior performance of the devices employing modified HTLs.

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Enhanced Extraction Rates through Gap States of Molybdenum Oxide Anode Buffer

Cited by 46 publications

References 61 publications

Nonprecious Copper‐Based Transparent Top Electrode via Seed Layer–Assisted Thermal Evaporation for High‐Performance Semitransparent n‐i‐p Perovskite Solar Cells

Nonprecious Copper‐Based Transparent Top Electrode via Seed Layer–Assisted Thermal Evaporation for High‐Performance Semitransparent n‐i‐p Perovskite Solar Cells

A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties

Steering the Properties of MoOx Hole Transporting Layers in OPVs and OLEDs: Interface Morphology vs. Electronic Structure

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