In this work, we report a novel donor-acceptor based solution processable low band gap polymer semiconductor, PDPP-TNT, synthesized via Suzuki coupling using condensed diketopyrrolopyrrole (DPP) as an acceptor moiety with a fused naphthalene donor building block in the polymer backbone. This polymer exhibits p-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistor (OTFT) devices. The hole mobilities of 0.65 cm 2 V À1 s À1 and 0.98 cm 2 V À1 s À1 are achieved respectively in bottom gate and dual gate OTFT devices with on/off ratios in the range of 10 5 to 10 7 . Additionally, due to its appropriate HOMO (5.29 eV) energy level and optimum optical band gap (1.50 eV), PDPP-TNT is a promising candidate for organic photovoltaic (OPV) applications. When this polymer semiconductor is used as a donor and PC 71 BM as an acceptor in OPV devices, high power conversion efficiencies (PCE) of 4.7% are obtained. Such high mobility values in OTFTs and high PCE in OPV make PDPP-TNT a very promising polymer semiconductor for a wide range of applications in organic electronics.

The temperature dependence of the principal photovoltaic parameters of perovskite photovoltaics is studied. The recombination activation energy is in good agreement with the perovskite's bandgap energy, thereby placing an upper bound on the open-circuit voltage. The photocurrent increases moderately with temperature and remains high at low temperature, reinforcing that the cells are not hindered by insufficient thermally activated mobility or carrier trapping by deep defects.

In this review, we present an update on the methods for screening 2D materials suitable for valleytronic applications. We begin with an introduction to the field highlighting some of the latest findings and seminal works. Then we provide a brief background on the physics of valley- and layer- pseudospins in layered 2D materials such as transition metal dichalcogenides. This is followed by a detailed survey of a number of key techniques commonly employed to elucidate valley properties in such materials, highlighting in particular their capability for discriminating valley pseudospins, their key advantages and current limitations. Finally, we conclude by summarising the state-of-the-art assessing materials for valleytronic applications and point the reader to the current open questions that could have critical influence on the technological impact that may be derived from such materials.