Energy-band alignments at LaAlO3 and Ge interfaces

Abstract

The energy-band alignments for LaAlO3 films on p-Ge(001) with and without GeOxNy interfacial layer have been studied using photoemission spectroscopy. The valence-band offsets at LaAlO3∕GeOxNy∕Ge and LaAlO3∕Ge interfaces were measured to be 2.70 and 3.06eV, respectively. The effect of interfacial GeOxNy layer on the band alignments is attributed to the modification of interface dipoles. The conduction-band offsets at LaAlO3∕Si(001) and LaAlO3∕Ge interfaces are found to have the same value of 2.25±0.05eV, where the shift of valence-band top accounts for the difference in the energy-band alignment at two interfaces.

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

“…The VB maximum is determined by using a linear extrapolation method. 27 In this case, the VB offset is approximately equal to the difference of the linear extrapolation intercept between AlN/AlGaN/GaN samples and bulk AlGaN/GaN samples. As is shown in Fig.…”

Energy-band alignments of HfO2 on p-GaAs substrates

“…2. 17 The VBO for as-deposited HfO 2 / Si/ p-GaAs gate stack is 2.90 eV, which is also higher compared to HfO 2 / p-GaAs gate stack. nealed with SiH 4 at 400°C for 1 min at 5 Torr, for Si IPL, prior to the HfO 2 deposition.…”

Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

“…This result is in good agreement with the interfacial chemical bonds information extracted from the O 1 s and Ge 3 d spectra as mentioned above. In addition, the CBO of GeO 2 relative to Ge (~0.54 eV) is much smaller than that of La x Al y O on Ge (~2.2 eV) [28,29]. Consequently, due to the existence of a thinner interfacial layer, a bigger value of CBO is obtained when H 2 O was used as oxidant.…”