The nitrogen-doping induced changes in optical properties and electronic structures of SrTiO3 films have been investigated by using spectroscopic ellipsometry and x-ray photoemission spectroscopy. Combined with the first-principles calculations, it is found that the localized N 2p states above O 2p states are attributed to the new absorption edge at 500nm and the photoactivity in the visible light region. Our results are consistent with both recent experimental and theoretical studies on nitrogen-doped TiO2, where the visible light responses arise from the localized N 2p states slightly above the valence-band edge rather than the band gap narrowing.

The correlation between the geometric and electronic structures of Zn-phthalocyanine (ZnPc) and F16ZnPc on Cu(111) were studied by x-ray standing wave and angle-resolved photoemission spectroscopy. We found evidence for a distortion of the planar molecules upon adsorption, with the central Zn atom in the molecule protruding towards the substrate. This modifies the energy levels of both the molecule and the substrate, which appear as interface states. The site-specific geometric and electronic relaxations are an important effect for organic-metal interface energetics.

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The thermal stability of nitrogen-doped SrTiO3 (001) films in terms of electronic and optical properties has been studied by using x-ray photoemission spectroscopy, x-ray absorption spectroscopy, and spectroscopic ellipsometry techniques. The chemical states of nitrogen in nitrogen-doped SrTiO3 films include both substitutional and interstitial states. The N 2p states localized above the O 2p-derived valence band maximum are attributed to the change of optical properties. Postannealing will induce the valence band edge shift due to the thermal instability of interstitial N states, which may degrade the photocatalysis of nitrogen-doped SrTiO3 films during applications.

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