Emerging nanoscale silicon devices taking advantage of nanostructure physics

Abstract

This paper describes the present status of research on emerging nanoscale silicon devices that take full advantage of new physical phenomena which appear in silicon nanostructures. This new physics includes quantum effects that enhance the performance of MOS transistors and single-electron charging effects that add new function to conventional CMOS circuits. These physical phenomena may be used to extend the scaling and performance limits of conventional CMOS.

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

“…These options are numerous and can be classified in general according to three main directions: (i) the use of new materials in the continuity of the "bulk solution", allowing increasing MOSFET performances due to their dielectric properties (permittivity), electrostatic immunity (SOI materials), mechanical (strain), or transport (mobility) properties; (ii) the complete change of the device architecture (e.g. Multiple-Gate devices, Silicon nanowires MOSFET) allowing better electrostatic control, and, as a result, intrinsic channels with higher mobilities and currents; (iii) the exploitation of certain new physical phenomena that appear at the nanometer scale, such as quantum ballistic transport, substrate orientation or modifications of the material band structure in devices/wires with nanometer dimensions [8][9].…”

Characteristics control of single electron transistor with floating gate by charge pump circuit

“…However, the Beyond CMOS devices are so immature that it will take a tremendously long time to realize the integration of Beyond CMOS deivces for new information processging technologies. One of the promising approaches for future Beyond CMOS devices is, instead of the integaration of only Beyond CMOS devices, the integration of Beyond CMOS into the conventional CMOS platform to add new functionality to the present CMOS [1,2].…”

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

“…These options are numerous and can be classified in general according to three main directions: (i) the use of new materials in the continuity of the "bulk solution", allowing increasing MOSFET performances due to their dielectric properties (permittivity), electrostatic immunity (SOI materials), mechanical (strain), or transport (mobility) properties; (ii) the complete change of the device architecture (e.g. Multiple-Gate devices, Silicon nanowires MOSFET) allowing better electrostatic control, and, as a result, intrinsic channels with higher mobilities and currents; (iii) the exploitation of certain new physical phenomena that appear at the nanometer scale, such as quantum transport, substrate orientation or modifications of the material band structure in devices/wires with nanometer dimensions (Haensch et al, 2006;Hiramoto et al, 2006). Multiple-Gate nanowire MOS transistors ( Fig.…”