Articles you may be interested inVariation in surface plasmonic response due to the reorganization of Au nanoparticles in Langmuir-Blodgett film J. Appl. Phys. 116, 024316 (2014); 10.1063/1.4890034 GO and RGO based FETs fabricated with Langmuir-Blodgett grown monolayers AIP Conf.Nanoscale organized assembly of nanoparticulate TiO 2 -stearate monolayers through the Langmuir-Blodgett method J.A highly ordered monolayer film of alkanethiol-encapsulated gold nanoparticles was fabricated on a silicon substrate by using the Langmuir-Blodgett ͑LB͒ method. The effects on the particle order, of the particle concentration and the type of solvent of the LB spreading suspension of encapsulated gold particles, were studied. We found that a low particle concentration of 0.06 -0.3 mg/mL in chloroform is optimal for the fabrication of high quality gold particle monolayers. Since the proposed method is not restricted to gold particles, it is believed to be a practical process for fabricating quantum dot structures of various particle sizes and compositions.
In this article, we present an experimental study of the formation of a Langmuir–Blodgett (LB) monolayer of alkanethiol-encapsulated gold particles. We developed a procedure for preparing the LB spreading suspension from an aqueous gold colloid, and we fabricated a large-scale densely packed monolayer of alkanethiol-encapsulated particles covering an entire substrate using the LB technique. Scanning electron microscopy observations demonstrated that this LB monolayer is composed of domains of ordered close-packed encapsulated gold particles, some of which extended to about 10 μm in extent. A detailed study of the forming mechanism of the LB monolayer of gold particles indicates that the ordered particle domains were formed by a self-organization process induced by the evaporation of the spreading suspension before LB compression. These domains were then aggregated to a densely packed monolayer by the compression process. The proposed method provides a feasible procedure for fabricating a variety of new nanostructured materials.
This paper reports the first experimental demonstration of electron mobility enhancement due to the volume inversion at relatively high N inv region (6x10 12 cm -2 ) in (110)-oriented UTB DG nMOSFETs with the t body range of less than 5 nm. The physical origin of mobility enhancement is attributable to (1) the suppression of surface roughness scattering by relaxed electric field and (2) negligibly small degradation of the mobility limited by δ tSOI -induced scattering compared to SG that severely degrades mobility in (100)-oriented UTB DG nMOSFETs by quantum confinement.
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