Elimination of the sidewall defects in selective epitaxial growth (SEG) of silicon for a dielectric isolation technology

Sherman, J. M.; Neudeck, G.W.; Denton, J.P.; Bashir, Rashid; Fultz, William W.

doi:10.1109/55.496453

Cited by 15 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 Thermally nitrided thermal silicon dioxide ͑NOX͒ can also eliminate sidewall defects in the SEG silicon region. 15 The present experimental results indicate that forming a layer of NOX around the active silicon region eliminates the edge transistors in SEG oxide trench isolated N-MOSFETs. The NOX effectively suppresses boron out-diffusion during the high temperature process steps.…”

Section: Introductionmentioning

confidence: 55%

Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Yang

Denton

Neudeck

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inStrain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates Appl. Phys. Lett. 99, 022106 (2011); 10.1063/1.3604417 A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness Nanopatterning of epitaxial Co Si 2 using oxidation in a local stress field and fabrication of nanometer metaloxide-semiconductor field-effect transistors J. Appl. Phys. 96, 5775 (2004); 10.1063/1.1808246 Nanometer patterning of epitaxial CoSi 2 /Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors Bulk N-channel metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ can suffer from parasitic edge transistor effects, unless several extra processing and masking steps are used. These edge devices increase the off-state current and degrade subthreshold slope of the N-MOSFETs. Parasitic edge transistors in oxide trench isolated N-MOSFETs, formed using selective epitaxial growth of silicon, were caused by the boron out-diffusion during high temperature process steps. Employing a simple ammonia nitridation of the field oxide before the epitaxial growth step, boron out-diffusion into the surrounding oxide was suppressed. The parasitic edge transistors in oxide trench isolated N-MOSFETs were eliminated.

show abstract

Section: Introductionmentioning

confidence: 55%

Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Yang

Denton

Neudeck

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4] More recently, selective growth has been used for epitaxial base for bipolar junction transistors, [5][6][7] epitaxial channel in metal-oxidesemiconductor field effect transistors ͑MOSFETs͒, [8][9][10] and device regions for advanced isolation. 11 Figure 1 shows the various selective growth techniques and how they can be applied to device fabrication. In addition, as silicon devices are scaled down to the deep submicron regime, the cost of device processing is increasing very rapidly.…”

Section: Backgroundõmotivationmentioning

confidence: 99%

“…Device isolation using selective epitaxial growth has been proposed earlier. 11,15,16 Figure 4 shows a typical device isolation process using selective epitaxial growth. As can be noted from the cross sections, the process is simple and easy a͒ Author to whom correspondence should be addressed; electronic mail: bashir@ecn.purdue.edu to implement.…”

Section: Backgroundõmotivationmentioning

confidence: 99%

See 1 more Smart Citation

Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration

Bashir¹,

Su²,

Sherman³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the detailed electrical characterization of these sidewall defects using P+/N junction diodes fabricated using silicon dioxide and thermally nitrided silicon dioxide as the field insulator. It is shown that the use of field oxide which was nitrided at 1100 °C for 60 min in ammonia gas ambient reduced the reverse saturation current density in the diodes by a factor of 6 and also improved the forward recombination and ideality factors when compared to standard thermal field oxide isolated diodes. The improvement of the sidewall quality was attributed to a reduction in thermal stress due to the modification of the coefficient of thermal expansion of nitrided silicon oxide.

show abstract

“…1 To reduce device-to-device spacing, a new dielectric isolation was recently developed using SEG and high quality thermal SiO 2 insulators for a very simple low-cost method. 2 SEG has also been used to form novel device structures 3 and for making very high speed Si-Ge heterojunction bipolar transistors. 4 SOI device islands of silicon in SiO 2 have been demonstrated 5 with low stacking fault densities.…”

Section: Introductionmentioning

confidence: 99%

Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

Kongetira

Neudeck

Takoudis

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

Elimination of the sidewall defects in selective epitaxial growth (SEG) of silicon for a dielectric isolation technology

Cited by 15 publications

References 8 publications

Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration

Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

Contact Info

Product

Resources

About