Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Abstract

Articles you may be interested inStrain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates Appl. Phys. Lett. 99, 022106 (2011); 10.1063/1.3604417 A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness Nanopatterning of epitaxial Co Si 2 using oxidation in a local stress field and fabrication of nanometer metaloxide-semiconductor field-effect transistors J. Appl. Phys. 96, 5775 (2004); 10.1063/1.1808246 Nanometer patterning of epitaxial CoSi 2 /Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors Bulk N-channel metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ can suffer from parasitic edge transistor effects, unless several extra processing and masking steps are used. These edge devices increase the off-state current and degrade subthreshold slope of the N-MOSFETs. Parasitic edge transistors in oxide trench isolated N-MOSFETs, formed using selective epitaxial growth of silicon, were caused by the boron out-diffusion during high temperature process steps. Employing a simple ammonia nitridation of the field oxide before the epitaxial growth step, boron out-diffusion into the surrounding oxide was suppressed. The parasitic edge transistors in oxide trench isolated N-MOSFETs were eliminated.