Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

Abstract

Articles you may be interested inPhysics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

“…E GR (DCS) has been found to increase monotonously from 43.7 up to 53.4 kcal mol À1 with the SiH 2 Cl 2 partial pressure, which is to the best of our knowledge the first time that such a behavior is reported. A mean value of 49.3 kcal mol À1 is associated to E GR (DCS), to be compared to the 52.2 kcal mol À1 value of Kongetira et al [33]. This exponential dependence of the Si growth rate on the reverse absolute temperature is in fact related to the desorption of hydrogen from the silicon surface in order for silicon atoms to be incorporated.…”

“…The low-temperature (750 CpTp850 C) Si growth rate modelling we have adopted here is based on the work of Kongetira et al [33]. They have fitted their Si growth rate dependence on the SiH 2 Cl 2 and HCl partial pressures, on the growth temperature and pressure with the following semiempirical expression:…”

Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces

“…For the SiGe layers grown on vicinal Si(1 1 1) substrates (3.81 misorientation angle), o À 2y profiles around the (1 1 1) diffraction order in the grazing incidence and in the grazing exit geometries were systematically acquired in order to correctly extract the Ge concentration (mean value of the ones coming from each profile). Simply speaking, the growth of Si using a SiH 2 Cl 2 +HCl chemistry is expected to take place according to the following three equations [12,13]: SiH 2 Cl 2 thermally dissociates in the gas phase into SiCl 2 and H 2 :…”

Growth Kinetics of Si and SiGe on Si

“…In the high temperature region, the growth rate on Si( 11) is superior to the one on Si(1 10), while the opposite is true in the low temperature region. We have modeled semi-empirically the Si growth rate with a dichlorosilane (+ hydrochloric acid chemistry at low growth temperatures) on the three kinds of surfaces with the following relationship [5][6] Figure 5). …”