Growth Kinetics of Si and SiGe on Si

Hartmann, J.-M.; Burdin, M.; Rolland, G.; Billon, T.

doi:10.1109/istdm.2006.246520

Cited by 2 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Concerning the {1 1 1} facets, their activation energy is slightly higher than that for the {1 0 0} planes, with 59.8 kcal mol −1 . These values are very close to those obtained by other teams [7] by kinetics measurements on substrates with different orientations. They reported 57.2 kcal mol −1 and 61.2 kcal mol −1 for silicon growth on the {1 0 0} and {1 1 1} planes, respectively.…”

Section: Kinetics Of the High-density Planessupporting

confidence: 90%

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

Loubet¹,

Talbot²,

Dutartre³

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper reports morphological results and kinetics of the main high-density planes obtained after silicon growth on two different etched figures exhibiting the {3 1 1} and/or {1 1 1} planes. These etched profiles were generated by HCl chemical vapour etching on SiO 2 -patterned wafers with the (0 0 1) orientation. Deposition was performed after SiO 2 removal on a full-sheet wafer with a chlorinated chemistry. Scanning electron microscope observations after silicon growth at temperatures between 700 • C and 850 • C permitted us to show that the appearance of the different facets is strongly dependent on the etch profile and on the chamber temperature. Besides that, these results permitted us to point out the difficulty in doing an acceptable silicon epitaxy on the {1 1 1} plane at low temperature (<750 • C). Moreover, we could extract the growth rates of the different high-density planes and we obtained values of activation energies associated with different populations: the values for the {1 0 0} and {1 1 1} planes are different when the {3 1 1} and {9 1 1} planes exhibit very close values.

show abstract

Section: Kinetics Of the High-density Planessupporting

confidence: 90%

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

Loubet¹,

Talbot²,

Dutartre³

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…It indicates that all the carbon in the Si:C film grown on (110) plane is incorporated into the interstitial sites and/or formed precipitates. It was reported that Si and SiGe epitaxial films grown on the (110) plane result in reduced growth rate but without any degradation in the microstructure compared to those grown on the (100) plane [10]. However, a TEM study of Si:C epitaxial films grown on the (110) Si substrates shows a highly defective microstructure, as depicted in Figure 8 (a).…”

Section: Selectivity Of Si:c Epitaxymentioning

confidence: 97%

Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties

Kim

Lam

et al. 2007

ECS Trans.

View full text Add to dashboard Cite

Si:C epitaxy was investigated to increase the substitutional carbon concentration, to achieve selectivity, and to understand growth characteristics on different Si crystallographic planes. A defective microstructure was observed next to the recess sidewalls. It was found that Si:C epitaxial growth on (110) crystallographic plane is heavily defective while the same epitaxy on (100) plane shows defect- free microstructure. By process optimization and using the appropriate chemistries for deposition and etch steps, we have developed a selective Si:C epitaxy process which result in a defect-free epitaxial layer that fills a 60 nm deep recessed area with 1.5 % substitutional [C] with 100 % substitutionality, and 100 % selectivity on dielectrics. Also, thermal stability of the substitutional [C] in Si:C epitaxy was tested with spike annealing at 1050 oC. No loss of substitutional [C] was observed after the spike annealing from a Si:C film with 100 % carbon substitutionality.

show abstract

Growth Kinetics of Si and SiGe on Si

Cited by 2 publications

References 5 publications

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties

Contact Info

Product

Resources

About