High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

Abstract

This paper reports morphological results and kinetics of the main high-density planes obtained after silicon growth on two different etched figures exhibiting the {3 1 1} and/or {1 1 1} planes. These etched profiles were generated by HCl chemical vapour etching on SiO 2 -patterned wafers with the (0 0 1) orientation. Deposition was performed after SiO 2 removal on a full-sheet wafer with a chlorinated chemistry. Scanning electron microscope observations after silicon growth at temperatures between 700 • C and 850 • C permitted us to show that the appearance of the different facets is strongly dependent on the etch profile and on the chamber temperature. Besides that, these results permitted us to point out the difficulty in doing an acceptable silicon epitaxy on the {1 1 1} plane at low temperature (<750 • C). Moreover, we could extract the growth rates of the different high-density planes and we obtained values of activation energies associated with different populations: the values for the {1 0 0} and {1 1 1} planes are different when the {3 1 1} and {9 1 1} planes exhibit very close values.

Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)

“…Several studies reported for both growth and etching processes from the vapor phase showed that the morphology and roughness of the incipient thin films strongly depend on the substrate surface roughness, surface ripples, and faceting, and it is a strong concern in selective epi-growth technologies. − Moreover, Dutartre et al reported that lateral epitaxial overgrowth and epi rounding in narrow lines is strongly controlled by substrate microfaceting effects and slow-growing crystal facets in the Si(100)/SiGe system …”

Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials

“…The total pressure was adjusted to 2000 Pa for both materials. {1 1 1} plane creation at pattern edge is favoured [14]. Then, the SiO 2 hard mask is removed via a conventional HF-wet clean and finally the {1 1 3} plane is created thanks to a Si HT n-SEG (850 1C).…”

“…Thus, for both materials, a similar kinetics ranking, defined as GR 111 oGR 113 oGR 001 (GR hkl ¼Growth Rate of corresponding plane), is observed and seems to equalize at low temperature. Therefore, the growth kinetics anisotropy can be characterized by the ratio r hkl , which is defined by the growth rate of corresponding (hkl) plane (GR hkl ) divided by the growth rate of (0 0 1) surface (GR 001 ): r hkl ¼GR hkl / GR 001 [23]. This ratio is plotted on the respective offset graph.…”

Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices

“…The advantage of this profile is the absence of a focal point of stress and close proximity of the stressed layer to Si channel. The drawback is that numerous facets are exposed, where the different growth rates on different crystallographic planes play an important role [16][17].…”

“…The choice of the Si substrate surface orientation and the channel direction has consequences on the carrier mobility [15] as well as on the growth kinetics [16,17] and etch kinetics [18] of the SiC:P films since different crystallographic planes become exposed in the formed recess. Some aspects of surface preparation prior to epi deposition and possible resulting problems have been described previously [14].…”