Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

Liu, Sen; Lu, Nianduan; Zhao, Xiaolong; Xu, Hui; Banerjee, Writam; Lv, Hangbing; Long, Shibing; Li, Qingjiang; Liu, Qi; Liu, Ming

doi:10.1002/adma.201603293

Cited by 199 publications

(131 citation statements)

References 43 publications

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“…In our previous work, we have demonstrated that the metallic CF overgrowth in ECM devices can cause N-SET behavior [24]. While in this work, we have further observed two kinds of N-SET behaviors (labeled as N-SET1 and N-SET2) in our Cu/ZrO 2 /Pt devices.…”

Section: Introductionsupporting

confidence: 55%

“…The virgin Cu/ZrO 2 /Pt device can be formed in both positive and negative voltage polarities. More specifically, when a positive voltage is applied on a virgin device in the P-Forming process, the Cu atoms are oxidized into Cu 2+ and reduced to Cu atoms inside the ZrO 2 layer [13, 24]. Then, a Cu CF is formed via electrochemical reaction and electromigration inside the ZrO 2 layer, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…During the N-RESET process, the Cu CF is dissolved due to the thermal-assisted electrochemical reaction by applying a negative voltage on the device [13]. But the N-SET1 behavior may occasionally occur when the Cu atoms precipitated in the inert electrode after several switching cycles provide sufficient Cu 2+ source to reform the Cu CF in the N-RESET process [24], as shown in Fig. 6c.…”

Section: Resultsmentioning

confidence: 99%

“…The ECM effect and VCM effect are coexistent in the oxide-based ECM device due to the inevitable oxygen vacancies in the oxide layer, especially when a negative voltage is applied on the device [18, 19]. Recently an unexpected negative-SET (N-SET) behavior has been observed in several ECM structure devices [20–24], which means that a CF is formed in the negative voltage. The N-SET behavior will cause an overset issue under DC sweeping mode due to the high compliance current in N-RESET process, resulting in hard breakdown.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Liu

Zhao

et al. 2016

Nanoscale Res Lett

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Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO2/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices.

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Section: Introductionsupporting

confidence: 55%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Liu

Zhao

et al. 2016

Nanoscale Res Lett

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“…The uncontrollable migration of ions in the active layer under an electric field [31,55,90] would lead to a current-retention dilemma in memristive devices. [90,95] Thus, graphene is an ideal blocking layer to ions diffusion. [90,95] Thus, graphene is an ideal blocking layer to ions diffusion.…”

Section: Device Reliabilitymentioning

confidence: 99%

2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

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demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

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Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

Yin

Zeng

Wan

et al. 2018

Adv Funct Materials

145

116

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A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfO y /HfO x /Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy (V O ) distribution of a complete synapse and its Ca 2+ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the V O migration prompted by directional external bias. The extrusion (injection) of the V O s and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca 2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5-7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large-scale integration used in neuromorphic networks.

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Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

Cited by 199 publications

References 43 publications

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

2D Layered Materials for Memristive and Neuromorphic Applications

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

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