Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Liu, Sen; Zhao, Xiaolong; Li, Qingjiang; Li, Nan; Wang, Wei; Liu, Qi; Xu, Hui

doi:10.1186/s11671-016-1762-5

Cited by 21 publications

(10 citation statements)

References 33 publications

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“…This temperature dependence rules out metallic-like conduction and excludes that Ag atoms serve as the conducting filaments. Other reports of IGZO-based resistive memories have shown a metallic-like temperature dependence of conductance, − in contrast to the data presented here. This may be related to residual impurities from the solution processing, more precisely ethylene glycol and ethanol .…”

Section: Results and Discussioncontrasting

confidence: 99%

Memristors Using Solution-Based IGZO Nanoparticles

et al. 2017

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Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltages of ±1 V, on/off ratios higher than 10, high endurance, and a retention time of up to 10 4 s. The better performing devices were achieved with annealing temperatures of 200 °C and using asymmetric electrode materials of titanium and silver. The physics behind the improved switching properties of the devices is discussed in terms of the oxygen deficiency of IGZO. Temperature analysis of the conductance states revealed a nonmetallic filamentary conduction. The presented devices are potential candidates for the integration of memory functionality into low-cost System-on-Panel technology.

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Section: Results and Discussioncontrasting

confidence: 99%

Memristors Using Solution-Based IGZO Nanoparticles

et al. 2017

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“…Here, it was difficult to stop the voltage before negative-set, due to the variation in reset voltage. Similar negative-set behaviors of the conductive bridge randomaccess memory (CBRAM) type have been reported in the Cu/ZrO 2 /Pt [40] device and the Ag/ZrO 2 /Pt device [41]. Finally, we demonstrated the pulse operation for the set and reset processes without negative-set behavior.…”

Section: Resultssupporting

confidence: 80%

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Ryu

Kim

2021

Metals

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

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“…A combination of both CBRAM and OxRRAM mechanisms is also possible 13,36 . The Te/TiTe intensity ratio analysis is consistent with significant Te release during forming and possible Te diffusion.…”

Section: Discussionmentioning

confidence: 99%

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

Mendes

Martínez

Ablett

et al. 2018

Sci Rep

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We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al2O3/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al2O3) and the TiTe top and Ta bottom electrodes. During reverse forming, Te accumulates at the TiTe/Al2O3 interface, the TiOx layer between the electrolyte and the electrode is reduced and the TaOx at the interface with Al2O3 is oxidized. These interfacial redox processes are related to an oxygen drift toward the bottom electrode under applied bias, which may favour Te transport into the electrolyte. Thus, the forming processes is related to both Te release and also to the probable migration of oxygen vacancies inside the alumina layer. The opposite phenomena are observed during the reset. TiOx is oxidized near Al2O3 and TaOx is reduced at the Al2O3/Ta interface, following the O2− drift towards the top electrode under positive bias while Te is driven back into the TiTe electrode.

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Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Cited by 21 publications

References 33 publications

Memristors Using Solution-Based IGZO Nanoparticles

Memristors Using Solution-Based IGZO Nanoparticles

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

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