demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

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