2D Layered Materials for Memristive and Neuromorphic Applications

Abstract

demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

Stimuli‐Enabled Artificial Synapses for Neuromorphic Perception: Progress and Perspectives

“…Electric field-driven electron/hole transfer between the different functional layers of the device can also be used to modulate the channel conductivity. The working principles of this electron/ hole transfer-modulated conductivity change can be categorized into two types: floating gate-type (as illustrated in Figure 3) [31,[74][75][76] and interface-type (as illustrated in Figure 4). [17,36] In the former case, a floating gate (FG) that acts as a charge trapping layer is generally separated from the channel and the gate using dielectric layers.…”

“…In addition, the excellent mechanical properties of 2D materials allow stable RS behavior under the application of mechanical strain, which represents a major advantage for flexible electronics applications. [75,77,78] Choi et al [79] performed a pioneering work on FG devices that were based entirely on stacked 2D materials. In this work, graphene and MoS 2 were used alternately as the channel and FG materials and were further integrated with an h-BN based tunneling barrier.…”

“…However, some obvious limitations still remain for these devices, including their narrow bandwidth, high energy consumption, and slow signal transmission because of their complex wire-lines and multi-terminal device structures. [31,75] Electrically stimulated artificial synapses cannot respond directly to optical signals, and the incorporation of arrays of image sensors is thus required to implement neuromorphic visual systems. Therefore, there is strong demand for the development of photonic synaptic devices with high efficiency, low energy consumption, and rich functionalities.…”

Bioelectronics‐Related 2D Materials Beyond Graphene: Fundamentals, Properties, and Applications

“…[ 21 ] These characteristics have enabled a wide scope of TMDC applications in health monitoring, bioimaging, artificial synapses, and power supply. [ 4,22–25 ] In addition to TMDCs, MXenes and BP are also the rising stars of 2D materials beyond graphene. The superb flexibility, ease of functionalization, and good biocompatibility of these 2D materials beyond graphene make them well suited for integration into biosystems for diverse bioelectronic applications ( Figure ).…”

Fabrication of Flexible Resistive Switching Devices Based on Lead‐Free All‐Inorganic CsSnBr3 Perovskite Using a One‐Step Chemical Vapor Deposition Method

“…[23] Fortunately, most of the halide perovskitebased memory devices demonstrate satisfactory RS performance, attributing to their mixed electronic-ionic properties and cost effectiveness. [24][25][26][27] Nevertheless, the works on lead-free all-inorganic perovskite CsSnBr 3 based RS devices, especially the flexible counterparts are less investigated. In this work, we report the synthesis of lead-free all-inorganic perovskite CsSnBr 3 film on flexible polyethylene terephthalate (PI) substrates through a simple onestep chemical vapor deposition (CVD) method for memory applications.…”