Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Radosavljević, M.; Dewey, G.; Basu, Dipanjan; Boardman, J.; Chu-Kung, B.; Fastenau, J. M.; Kabehie, Sanaz; Kavalieros, J.; Le, Van Son; Liu, W. K.; Lubyshev, D.; Metz, M.; Millard, Kimberly A.; Mukherjee, Niloy; Pan, Ling; Pillarisetty, R.; Rachmady, W.; Shah, Uday; Then, Han Wui; Chau, R.

doi:10.1109/iedm.2011.6131661

Cited by 139 publications

(80 citation statements)

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“…90 with fi ns as narrow as 30 nm and excellent characteristics have been demonstrated. 91 A summary of the state of the art of top-down fabricated InGaAs MOSFET technology for logic is presented in Figure 3c . This fi gure shows the ON-current that is obtained by fi xing the OFF-current at 100 nA/µm and the operating voltage at 0.5 V. 9 This fi gure of merit balances the requirements for high current drive at low voltage and good SCEs.…”

Section: From Planar To 3d Device Structuresmentioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

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Section: From Planar To 3d Device Structuresmentioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

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“…A pFET version has been demonstrated in the Si/Ge material system, Figure 1. For nFETs, the Ge concentration in the channel needs to be lower than the substrate concentration to get the desired conduction band offset: in this case a structure with a Si 1-x Ge x -channel on a Si 1-y Ge y Strain-Relaxed Buffer (SRB) can be imagined (x<y), besides various solutions in the III/V material systems (10)(11)(12). IFQW pFETs show excellent performance and electrostatics (14)(15)(16).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors

Eneman¹,

Witters²,

Collaert³

et al. 2012

ECS Trans.

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Novel device architectures offer improved scalability but come often at the price of increased layout sensitivity and a reduced or changed effectiveness of stressors and gate-last integration schemes. This work focuses on stress effects in n-type FinFETs and p-type Si1-xGex-channel pFETs, and relies mainly on TCAD results. It will be shown that on n-FinFETs, tensile stressed Contact Etch-Stop Layers (t-CESL) are less effective than on planar FETs when a gate-first scheme is used. For gate-last schemes, CESL is as effective as on planar FETs, moreover a strong boost is expected when compared to gate-first schemes. Tensile stressed gates are shown to be an effective stressor on gate-first n-FinFETs, but not on gate-last: in the latter case a slight mobility degradation is predicted. For pFETs with strained Si1-xGex-channels like the Implant-Free Quantum Well (IFQW) FET, it will be shown that elastic relaxation during source/drain recess is an important factor that reduces the effectiveness of Si1 yGey source/drain stressors. For scaled technologies, omitting the source/drain recess altogether and opting for a raised source/drain scheme is preferred. In IFQW pFETs, dependence of the drive current on transistor width is an important concern. It will be shown that a Si1 yGey source/drain reduces the layout dependence of IFQW FETs, an effect that is enhanced further when combined with a gate-last integration scheme.

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“…One enticing approach is to replace the Si channel with high intrinsic hole mobility Ge for p-channel device compared to III-V p-channel material. [8][9][10] Alternative approaches are different surface orientations to improve the carrier mobility, [11][12][13][14] strain engineering, 11,15,16 device architecture, 8,9,17 and optimal channel direction. [19][20][21][22][23] Research efforts are currently devoted towards investigation of the Ge as channel material, since higher intrinsic carrier mobility of Ge can provide a larger drive current, and its smaller bandgap can enable operation at a lower voltages.…”

Section: Introductionmentioning

confidence: 99%

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait

Zhu

Maurya

et al. 2013

Journal of Applied Physics

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Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Cited by 139 publications

References 0 publications

III–V compound semiconductor transistors—from planar to nanowire structures

III–V compound semiconductor transistors—from planar to nanowire structures

(Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

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