Electroresistance and field effect studies on manganite based heterostructure

Solanki, P.S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

doi:10.1063/1.4917563

Cited by 42 publications

(14 citation statements)

References 27 publications

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“…These observations suggest a complex process of charge transport rather than a simple field induced charge injection mechanism, generally observed for manganite-based heterostructures having electrically polarizable ZnO layers and SNTO substrates. 5,26,42 Fig. 8 shows the variation in ER with the applied electric field recorded and calculated at 20, 60, 120, 200, 240 and 300 K. Variation in ER with the applied electric field is the same for both wet and dry chemical method grown heterostructures, at respective temperatures.…”

Section: Resultsmentioning

confidence: 96%

“…3,4 In most of the cases, mixed valent manganites are used as conducting (or semiconducting) channels in these bilayered structures because manganites are highly sensitive to small external perturbations by temperature, magnetic field, electric field, current, voltage, pressure, ion irradiation, ion implantation, light illumination, synthesis parameters, etc. 5,6 Also, the magnetic and transport properties of the manganite channel are strongly governed by spin-latticecharge-orbital degrees of freedom. 7,8 Nanoscale non-homogeneity and the microscale phase separation scenario also affect various possible ground states in mixed valent manganites.…”

Section: Introductionmentioning

confidence: 99%

“…Few reports also exist on the field effect studies performed across the manganite conducting channel and electrically polarizable substrates. 5,12,16,25,26 Lourembam et al 25 have investigated the field effect studies on the Pr 0.65 (Ca 0.75 Sr 0.25 ) 0.35 MnO 3 manganite thin film using the SrTiO 3 substrate as a gate electrode. Hu et al 16 have also used a dielectric LaAlO 3 substrate as an effective gate to control the transport of La 0.7 Ca 0.3 MnO 3 and La 0.7 Ba 0.3 MnO 3 films.…”

Section: Introductionmentioning

confidence: 99%

“…Wu et al12 have used a conducting 1 at% Nb doped SrTiO 3 substrate as a gate to perform the field effect studies on the La 0.7 Ca 0.3 MnO 3 manganite channel. Similarly, Khachar et al26 and Solanki et al5 have also studied the resistance modifications and ER measured across the junctions consisting of…”

mentioning

confidence: 98%

“…Few reports also exist on the field effect studies performed across the manganite conducting channel and electrically polarizable substrates. 5,12,16,25,26 Lourembam et al 25 wherein they have used the Nb:SrTiO 3 substrate as a gate electrode. In this paper, we report the results of the transport (I-V) and ER studies on the LMO/LCMO/LAO manganite based heterostructure.…”

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confidence: 99%

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Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Gadani

Dhruv

Joshi

et al. 2016

Phys. Chem. Chem. Phys.

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In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied.

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 98%

“…Few reports also exist on the field effect studies performed across the manganite conducting channel and electrically polarizable substrates. 5,12,16,25,26 Lourembam et al 25 wherein they have used the Nb:SrTiO 3 substrate as a gate electrode. In this paper, we report the results of the transport (I-V) and ER studies on the LMO/LCMO/LAO manganite based heterostructure.…”

mentioning

confidence: 99%

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