Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Abstract

In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied.

Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures

“…an external electric field (to achieve a field effect) has been applied across the chemically grown LMO/LCMO manganite interface and temperature dependent resistance modulations have been understood for the same LMO/LCMO manganite interface. This type of measurement has already been reported by Gadani et al [31][32][33] under different temperature windows and different applied interface electric fields whereas the present case deals with comparatively higher applied electric fields to understand the charge conduction modifications for the same LMO/LCMO manganite based interface. In this extended work, the main goal of the investigation is to achieve possible large ER values (based on field effect configuration) which can be useful for its potential practical applications.…”

“…In this extended work, the main goal of the investigation is to achieve possible large ER values (based on field effect configuration) which can be useful for its potential practical applications. The employed temperature window can be found to be narrow between 200 K and 300 K in the present report due to the fact that considerably large effects of applied electric fields (through field effect configuration) can be expected near T P (which is expected to be well above 300 K [31][32][33] ) where much electronic phase fluctuations can be anticipated within the manganite lattices. In addition, to meet the possibility of potential applications of the present thin film device (i.e.…”

Precise engineering of ultrasound-mediated cerium oxide nanoparticles: Investigations on antioxidant, antibacterial activity and human osteomyelitis

“…It is well-known that the critical step in the synthesis of metal oxide by wet-chemical methods is the thermal decomposition of the obtained precursor [59][60][61]. The thermal analysis method (DTA-TG) allowed us to investigate the chemical transformation of the oxalate-type precursor into oxide powders during heating (Figure 1a and b).…”

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

“…Спектр функциональных материалов и технологий современной твердотельной микро-и наноэлектроники непрерывно расширяется [1][2][3][4][5][6][7][8][9]. При этом технологи-ческие подходы самоорганизации снизу-вверх (bottomup design), к которым относятся химические и элек-трохимические методы синтеза наноструктурированных объектов, интересны не только с точки зрения формиро-вания резисторов, диодов, транзисторов и электронных устройств на их основе, обладающих видоизмененными параметрами или усовершенствованными характеристи-ками благодаря, например, использованию широкозон-ных полупроводниковых материалов.…”

“…При этом технологи-ческие подходы самоорганизации снизу-вверх (bottomup design), к которым относятся химические и элек-трохимические методы синтеза наноструктурированных объектов, интересны не только с точки зрения формиро-вания резисторов, диодов, транзисторов и электронных устройств на их основе, обладающих видоизмененными параметрами или усовершенствованными характеристи-ками благодаря, например, использованию широкозон-ных полупроводниковых материалов. Не менее актуаль-ным направлением является создание наноэлектронных приборов с особыми параметрами, в частности с ха-рактеристиками, обусловленными туннельными эффек-тами [7][8][9]. Среди них классический туннельный диод Эсаки (Esaki tunnelling diode) и его модификация -обращенный диод (backward diode) выделяются таки-ми преимуществами квантовых приборов, как высокая скорость переключения и низкое энергопотребление одновременно со способностью работать при комнатной температуре.…”