Resistive switching phenomena: a probe for the tracing of secondary phase in manganite

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

“…Due to its compatibility with CMOS architecture, simple structure, good manufacturability, low cost, low power consumption, high speed, long durability, and dependability, it is an advantageous technology for nextgeneration memory design and in-memory computing where computing and storage can occur at the same place to offer distinct advantages over the current Von-Neumann based architecture in terms of processing speed and time lag in the hardware. The switching behavior of oxide-based RRAM devices [49][50][51][52][53][54] has been demonstrated in our recent works. However, researchers are constantly looking for alternative materials and devices to improve their switching behavior and metallohydrogels can be a useful candidate due to their semiconducting nature and device integration capacity.…”

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

“…Among the family of memory devices, nonvolatile memory (NVM) plays an important role and Resistive Random Access Memory , (RRAM) has received significant attention due to its simple architecture, smaller size, long write/read endurance ,, (>10 16 cycles), faster operating speed, excellent scalability (<10 nm), higher storage density, low cost, low power consumption, excellent compatibility etc. Most popular RRAM devices are transition metal oxide based − , but issues like presence of defects, interstitial impurities, grain boundary and polar discontinuity etc. often halter the performance reproducibility.…”