Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment

Pietzka, C.; Denisenko, Andrej; Romanyuk, Andriy; Schäfer, P.; Kibler, Ludwig A.; Scharpf, Jochen; Kohn, E.

doi:10.1016/j.diamond.2009.08.014

Cited by 21 publications

(20 citation statements)

References 16 publications

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“…A significant difference between the capacitance-voltage curves of the films before and after the treatment was observed confirming the efficiency of the O 2 plasma treatment in agreement with literature [5,6,9]. Also capacitance-voltage data provided us with the doping profile of the samples.…”

Section: Resultssupporting

confidence: 90%

“…This work is aimed on investigating diamond films before and after an O 2 plasma treatment used as a cleaning process for the surface. The electronic and electrochemical properties such as the capacitancevoltage measurements are strongly dependent on the oxidation treatment [4,5,6], which could be wet-chemical, anodic, plasma or thermal oxidation. One accepted explanation of the different electronic characteristics might be the different terminations on diamond surface: as-grown diamond is reported to be hydrogen terminated [7] while the carbon-oxygen functional groups are induced by the oxidation treatments [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Araujo

Berengue²,

Baldan

et al. 2014

MRS Proc.

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Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O 2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O 2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Araujo

Berengue²,

Baldan

et al. 2014

MRS Proc.

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“…By fitting these output characteristics with a first order MOSFET equation, the effective field effect mobility µ can be extracted from

I_{DS} = \frac{µ \cdot W_{normalG} \cdot C_{OX}}{L_{normalG}} [(V_{GS} - V_{normalP}) V_{DS} - \frac{V_{DS}^{2}}{2}],

where L G is the gate length, W G the gate width, C OX the oxide capacitance and V P is the pinch‐off voltage. As the gate contact is realised by the electrolyte, C OX corresponds essentially to the Helmholtz double layer capacitance C DL , which has been chosen to be C OX = 10 µF cm −2 (following the equivalent circuit and doping profile analysis), similar to . The pinch‐off voltage V P had been extracted to 0 V from the corresponding transfer characteristics (not shown).…”

Section: Resultsmentioning

confidence: 99%

Transport behaviour of boron delta‐doped diamond

Scharpf

Denisenko

Pakes

et al. 2013

Physica Status Solidi (a)

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The electrical transport properties of two-dimensional (2D) borondoped delta layers were investigated by a comprehensive analysis of physical, electrochemical and microscopic methods. The boron concentration profile was determined physically by elastic recoil detection (ERD) and compared to the doping (acceptor) profile extracted from capacitance-voltage (CV) measurements, giving a boron concentration of 2-4 Â 10 13 cm À2 . Corresponding field effect transistor (FET) characteristics, based on the boron-doped delta channel concept, measured in electrolyte, show good modulation behaviour but field effect mobilities in the range of 10 À2 -10 À1 cm 2 V À1 s À1 that are far below expected values. High-resolution transmission electron microscopy (HR-TEM) analysis was employed to shed new light on the transport behaviour of boron-doped delta layers, revealing an inhomogeneous and interrupted morphology. Based on this finding, a hypothesis is proposed, modelling the delta layer transport behaviour via hopping and tunnelling processes between boron clusters.

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“…We attributed these nonideal behaviors to existence of interfacial layer and interface states charges at Schottky metal-diamond interface which form Metal-Interfacial layerSemiconductor (MIS) structure. Oxidative treatments to terminate diamond's surface can induce surface oxidized layer and highly disordered surface defect layer [26][27][28]. Oxidation or Nitrization of Schottky metal might also form thin MoOx or MoNx layer.…”

Section: Resultsmentioning

confidence: 99%

Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

Nawawi

Tseng

Rusli

et al. 2014

Trans. Mat. Res. Soc. Japan

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Modeling and simulation of non-ideal characteristics of a vertical Mo/diamond Schottky barrier diode ( n = 7.677 and Schottky barrier height= 0.8554 at 298 K) were performed in finite element software. Diode's measured forward and reverse bias I V  characteristics at different temperature were presented and analyzed based on Metal-Interfacial layer-Semiconductor (MIS) model with interface states charges to explain the high ideality factor and Fermi level pinning at the Schottky metal-diamond interface. Current transport through the interfacial layer was simulated with Non-local tunneling model with Wentzel-Kramers-Brillouin (WKB) approximation. By combining characterization results and numerous simulations, we determined the values of unknown parameters (related to interfacial layer and energy distribution profile of the interface states charges) to best fit the forward and reverse bias I V T   characteristics simultaneously. Good fittings to the experimental data validate the use of MIS model. The best fitting was obtained with acceptor traps concentration of 1.3x10 13 to 2.7x10 13 eV -1 cm -2 . From reverse bias simulations, it was found that high electric field occurs inside the interfacial layer, especially at the corner of Schottky contact (~11.8 MV/cm). To avoid premature breakdown and realize true potential of diamond material, special attention on the metal-diamond interface must be paid.

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Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment

Cited by 21 publications

References 16 publications

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Transport behaviour of boron delta‐doped diamond

Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

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