Electronic Properties of Transferable Atomically Thin MoSe<sub>2</sub>/h-BN Heterostructures Grown on Rh(111)

Chen, Ming-Wei; Kim, Hokwon; Bernard, Carlo; Pizzochero, Michele; Zaldívar, Javier; Pascual, José; Ugeda, Miguel M.; Yazyev, Oleg V.; Greber, Thomas; Osterwalder, Jürg; Renault, O.; Kis, András

doi:10.1021/acsnano.8b05628

Cited by 22 publications

(15 citation statements)

References 42 publications

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“…The valance band structure of MoSe 2 /h-BN resembles those of the free-standing counterpart, without any evidence of interlayer hybridization. 125 The direct band gap feature of MoSe 2 is preserved in the heterostructure, and the valance band structure is similar to the calculations of free-standing monolayer MoSe 2 . 125 The interlayer interactions have enabled fascinating physics that is di±cult achieve in a single material, such as the Hofstadter's butter°y in graphene/h-BN heterostructure.…”

Section: Tmdc/h-bn Heterostructuressupporting

confidence: 69%

“…125 The direct band gap feature of MoSe 2 is preserved in the heterostructure, and the valance band structure is similar to the calculations of free-standing monolayer MoSe 2 . 125 The interlayer interactions have enabled fascinating physics that is di±cult achieve in a single material, such as the Hofstadter's butter°y in graphene/h-BN heterostructure. 13,[126][127][128] Apart from the electron-electron interaction, the another fundamental interaction namely electron-phonon interaction also plays a dominant role in modifying the properties of the system.…”

Section: Tmdc/h-bn Heterostructuressupporting

confidence: 69%

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Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

Sankar

Jeon

Jang

et al. 2019

NANO

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A comprehensive review of the fabrication process, fundamental properties and functionalities and device applications of heterogeneously integrated two-dimensional (2D) materials is provided. An extensive library of atomic 2D materials with selectable material properties exists and it is rapidly expanding, with which it is possible to construct hybrid or heterostructures that display novel properties with unique functionalities. Such heterostructures adding a degree of freedom to carriers in the third direction provide interesting possibilities for the design of functional novel devices. The subject of 2D heterostructures has now become so vast that no single article can cover the entire topic in any reasonable manner. This review is intended to bridge the gap between the major developments already discovered and current trends in 2D heterostructures.

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Section: Tmdc/h-bn Heterostructuressupporting

confidence: 69%

Section: Tmdc/h-bn Heterostructuressupporting

confidence: 69%

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

Sankar

Jeon

Jang

et al. 2019

NANO

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“…[ 254 ] Besides these common materials, many reports have also focused on the growth of other 2D materials on 2D h‐BN, such as WS 2 , Bi 2 Se 3 , and ZrS 2 . [ 255–259 ]…”

Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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“…For instance, the MoS 2 films can be fabricated with h‐BN buffer layers on the Rh(111)/Si(111) substrates. [ 92 ] The electronic properties of epitaxial MoS 2 films are proven as unintentional n‐doping semiconductors by photoemission electron momentum microscopy. Transverse heterojunctions of sub‐microscale h‐BN (monolayer)/graphene (monolayer) structures are achieved by hydrogen etching, and thereafter atmospheric‐pressure chemical vapor deposition.…”

Section: Bn Materials and Vdwhsmentioning

confidence: 99%

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Liu

Chen

Wang

et al. 2020

Adv Funct Materials

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The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro‐ and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h‐BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub‐nanometer lengths to replace the use of thick and stiff blocking dielectrics in two‐terminal or three‐terminal devices. The use of atomically thin h‐BN or h‐BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high‐density on‐chip integrated circuits, which has recently earned considerable interest. While the research in h‐BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in‐depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h‐BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h‐BN‐based memories and logic circuits are discussed.

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Electronic Properties of Transferable Atomically Thin MoSe₂/h-BN Heterostructures Grown on Rh(111)

Cited by 22 publications

References 42 publications

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

Building Functional Memories and Logic Circuits with 2D Boron Nitride

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Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

Cited by 22 publications

References 42 publications

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Contact Info

Product

Resources

About

Electronic Properties of Transferable Atomically Thin MoSe₂/h-BN Heterostructures Grown on Rh(111)