Electron trapping and detrapping in ion-beam-damaged diamond surfaces

Hoffman, A.; Andrienko, I.; Jamieson, David N.; Prawer, S.

doi:10.1063/1.1852083

Cited by 15 publications

(12 citation statements)

References 12 publications

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“…The C1s peak of the UNCD sample is observed at 286.65 eV, which is shifted by 1.05 eV higher than the normal C1s peak 15 ͑the blueshift͒, and is possibly due to the surface charging or oxidation of UNCD, which implies the existence of electron trapping centers in these films. 24,25 We have not found any significant N1s peak from the ion-implanted UNCD films during the measurement. This is probably due to the large penetration depth of implanted ions, such that the N is residing inside the films at a level far below the sensitivity of the XPS measurement.…”

Section: -4mentioning

confidence: 73%

“…Trapping of charges in the defect states is the probable reason for the increase in surface charging and the additional C1s blueshift after ion implantation. 24,25 In contrast, the C1s peak shifts in the reverse direction to lower the binding energies, suggesting the onset of formation of disordered carbon at an implantation dose of 10 13 ions/ cm 2 ͑N 13 sample͒. The presence of disordered carbon eliminates the atomic defects ͑the electron trapping centers͒, reducing the surface charge.…”

Section: -4mentioning

confidence: 99%

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Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

Joseph

Tai

Lee

et al. 2008

Journal of Applied Physics

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Enhanced electron field emission ͑EFE͒ properties for ultrananocrystalline diamond ͑UNCD͒ films grown on silicon substrate were achieved, especially due to the high dose N ion implantation. Secondary ion mass spectroscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy measurements indicated that the N ion implantation first expelled H − , induced the formation of disordered carbon ͑or defect complex͒, and then induced the amorphous phase, as the ion implantation dose increased. The postimplantation annealing process healed the atomic defects, but converted the disordered carbon to a stable defect complex, and amorphous carbon into a more stable graphitic phase. The EFE characteristics of the high dose ͑Ͼ10 15 ions/ cm 2 ͒ ion-implanted UNCD were maintained at an enhanced level, whereas those of the low dose ͑Ͻ10 14 ions/ cm 2 ͒ ion-implanted ones were reverted to the original values after the annealing process. Ion implantation over a critical dose ͑1 ϫ 10 15 ions/ cm 2 ͒ was required to improve the EFE properties of UNCD films.

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Section: -4mentioning

confidence: 73%

Section: -4mentioning

confidence: 99%

Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

Joseph

Tai

Lee

et al. 2008

Journal of Applied Physics

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“…Hot carriers thermalize within a few ps to states near the conduction and valence band minima, where they diffuse before recombining by radiative or non-radiative processes. Some carriers are trapped by surface or point defects [28]. For 2 keV electrons, the pair generation rate peaks ∼20 nm below the surface at ∼1.8 × 10 10 nA −1 nm s. Higher energy electrons generate more carriers, but they also penetrate more deeply into the lattice, resulting in a lower carrier creation density.…”

Section: Discussionmentioning

confidence: 99%

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

et al. 2012

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Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800 • C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation. 8

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“…Furthermore, the implantation of N ions into UNCD film can cause the removal of H from the film, 8 exposing the dangling bonds, which also possibly contribute for the C 1s blueshift. 22,23 Higher C 1s blueshift for M 200 film suggests that it contains more abundant atomic defects or defect complexes as compared with the S 100 and the M 50 films. The defects induced variation in full width at half maximum ͑FWHM͒ of C 1s spectra 12 is also evident from the figures, which further support the above arguments.…”

Section: Resultsmentioning

confidence: 98%

Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes

Joseph

Tai

Chen

et al. 2009

Journal of Applied Physics

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The single or multienergy nitrogen ͑N͒ ion implantation ͑MENII͒ processes with a dose ͑4 ϫ 10 14 ions/ cm 2 ͒ just below the critical dose ͑1 ϫ 10 15 ions/ cm 2 ͒ for the structural transformation of ultrananocrystalline diamond ͑UNCD͒ films were observed to significantly improve the electron field emission ͑EFE͒ properties. The single energy N ion implantation at 300°C has shown better field emission properties with turn-on field ͑E 0 ͒ of 7.1 V / m, as compared to room temperature implanted sample at similar conditions ͑E 0 = 8.0 V / m͒ or the pristine UNCD film ͑E 0 = 13.9 V / m͒. On the other hand, the MENII with a specific sequence of implantation pronouncedly showed different effect on altering the EFE properties for UNCD films, and the implantation at 300°C further enhanced the EFE behavior. The best EFE characteristics achieved for the UNCD film treated with the implantation process are E 0 = 4.5 V / m and current density of ͑J e ͒ = 2.0 mA/ cm 2 ͑at 24.5 V / m͒. The prime factors for improving the EFE properties are presumed to be the grain boundary incorporation and activation of the implanted N and the healing of induced defects, which are explained based on surface charge transfer doping mechanism.

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Electron trapping and detrapping in ion-beam-damaged diamond surfaces

Cited by 15 publications

References 12 publications

Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes

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