Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

Abstract

Enhanced electron field emission ͑EFE͒ properties for ultrananocrystalline diamond ͑UNCD͒ films grown on silicon substrate were achieved, especially due to the high dose N ion implantation. Secondary ion mass spectroscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy measurements indicated that the N ion implantation first expelled H − , induced the formation of disordered carbon ͑or defect complex͒, and then induced the amorphous phase, as the ion implantation dose increased. The postimplantation annealing process healed the atomic defects, but converted the disordered carbon to a stable defect complex, and amorphous carbon into a more stable graphitic phase. The EFE characteristics of the high dose ͑Ͼ10 15 ions/ cm 2 ͒ ion-implanted UNCD were maintained at an enhanced level, whereas those of the low dose ͑Ͻ10 14 ions/ cm 2 ͒ ion-implanted ones were reverted to the original values after the annealing process. Ion implantation over a critical dose ͑1 ϫ 10 15 ions/ cm 2 ͒ was required to improve the EFE properties of UNCD films.

Structural and electronic properties of nitrogen ion implanted ultra nanocrystalline diamond surfaces

“…Low dose ion implantation in UNCD introduces defects that enhance field emission but the property reverts back upon annealing. 10 High dose nitrogen implantation gives raise to good field emission even after annealing, but it makes a major part of the film into nanographite. 10 In this paper, we explore the possible reasons for the enhancement of the field emission properties in nitrogen implanted UNCD by scanning tunneling microscopy (STM).…”

“…10 High dose nitrogen implantation gives raise to good field emission even after annealing, but it makes a major part of the film into nanographite. 10 In this paper, we explore the possible reasons for the enhancement of the field emission properties in nitrogen implanted UNCD by scanning tunneling microscopy (STM). Scanning tunneling spectroscopy (STS) has been used to determine the local electronic density of states (DOS) at the grain and grain boundary and the possible electron emission sites.…”

The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation and annealing process-dosage effect

“…[10][11][12][13] However, N 2 incorporation via the addition of N 2 gas to the growth plasma requires high growth temperature (700°C) [13]. On the other hand, ion implantation has long been utilized to amend the properties of materials through controlled doping, using select dopants [14][15][16][17]. Recent reports show that oxygen and phosphorous ion implantation result in the n-type conductivity of the UNCD films [16,17].…”

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

“…Ion implantation has also been used to demonstrate enhanced field emission in SiC 14 and diamond films. 15 A combination of ion implantation and electron beam annealing has also been shown to create a GdSi 2 -based field emitter with low turn-on fields. 16 …”