Electron states of manganese luminescence centres in A1N

Karel, F.; Mareš, J.

doi:10.1007/bf01694863

Cited by 19 publications

(14 citation statements)

References 14 publications

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“…Mn-doped AlN (AlN:Mn), which shows bright redorange luminescence ascribed to the transition of 3d-electrons in a Mn ion [1][2][3], is one of promising lightemitting materials for display and lighting devices. Therefore, if high-quality thin-film phosphors of this material can be fabricated, one can further expect a variety of applications like thin-film electroluminescence (TFEL), high-resolution field emission display and so on.…”

Section: Introductionmentioning

confidence: 99%

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

Sato

Azumada

Atsumori

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

Sato

Azumada

Atsumori

et al. 2007

Journal of Crystal Growth

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“…The investigation on the powder of crystalline AlN:Mn by Karel and Mares [3] has revealed that the Mn-related PL at 600 nm has several narrow excitation bands located between 370 and 580 nm and a broad band at around 280 nm. The former excitation bands have been ascribed to the direct excitation of the d-electrons in Mn 4+ ions, whereas it has been considered that the latter excitation is accompanied by energy transfer from other impurity levels to the Mn centers.…”

Section: Resultsmentioning

confidence: 99%

“…Among group III nitrides, AlN:Mn, which exhibits red-orange emission from Mn 4+ ions [2,3], has potential applications for large-area display devices such as an electroluminescent (EL) panel. For this purpose, it is desirable to grow the films of this material with high luminescence quality at low substrate temperatures from a viewpoint of reducing the production cost.…”

mentioning

confidence: 99%

Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices

Hara

Sato

Azumada

et al. 2003

phys. stat. sol. (c)

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AlN : Mn films with Mn concentrations ranging from 2 × 10 18 to 1 × 10 21 cm -3 have been prepared by metalorganic chemical vapor deposition using bismethylcyclopentadienyl-manganese as a Mn source. The films grown at 1050 °C were polycrystals, whereas those grown at substrate temperatures (T s ) lower than 800 °C were mixture of polycrystalline and amorphous AlN, with the ratio of the latter phase increasing with decreasing T s . The films showed red-orange photoluminescence based on the transitions of d-electrons in Mn 4+ ions at room temperature. The intensity of the Mn-related emission increased with decreasing T s . The T s dependence of PL was discussed in conection with the structual properties of the films. The electroluminescence (EL) properties were also investigated by fabricating thin film EL devices on glass substrates. . However, Mn-related visible luminescence has not been reported for the films grown at substrate temperatures (T s ) lower than 600 °C, where glass substrates are available.In this paper, we report preparation of AlN:Mn films by MOCVD using bismethylcyclopentadienylmanganese [(CH 3 C 5 H 4 ) 2 Mn, abbreviated as (MeCp) 2 Mn] as a Mn source. The characterization of photoluminescence (PL) focusing on the T s dependence has revealed that even the film grown at 400 °C shows bright PL at room temperature. We also demonstrate the thin film EL (TFEL) operation by fabricating the devices consisting of the AlN:Mn active layer for the first time.

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“…Among AlN materials, AlN:Mn shows red-orange photoluminescence (PL) and cathodoluminescence (CL) with a 600 nm-peak [1][2][3]. The possibility of constructing an electroluminescence (EL) device using this material has been suggested by the preliminary results on the EL operation of powder AlN:Mn [4,5].…”

mentioning

confidence: 98%

“…1 Introduction Rare-earth doped AlN is a promising category of material for electroluminescent devices in visible wavelength region and spintronic devices with a high Curie temperature because of its wide bandgap, high melting point, and high luminescence efficiency. Among AlN materials, AlN:Mn shows red-orange photoluminescence (PL) and cathodoluminescence (CL) with a 600 nm-peak [1][2][3]. The possibility of constructing an electroluminescence (EL) device using this material has been suggested by the preliminary results on the EL operation of powder AlN:Mn [4,5].…”

mentioning

confidence: 99%

Analysis of the local structure of AlN:Mn using X‐ray absorption fine structure measurements

Miyajima

Kudo

Uruga

et al. 2006

Phys. Status Solidi (c)

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The local structure around the Mn atoms in MOCVD-grown AlN:Mn films which show Mn-related redorange photoluminescence with a 600nm-peak at room temperature was investigated using the X-ray absorption fine structure (XAFS) measurements. We found that Mn atoms occupy Al lattice sites in the AlN film and that the Mn ions have a charge between +2 and +3. From these results, we think that the redorange luminescence is caused by the transition of d-electrons in the Mn ions.1 Introduction Rare-earth doped AlN is a promising category of material for electroluminescent devices in visible wavelength region and spintronic devices with a high Curie temperature because of its wide bandgap, high melting point, and high luminescence efficiency. Among AlN materials, AlN:Mn shows red-orange photoluminescence (PL) and cathodoluminescence (CL) with a 600 nm-peak [1-3]. The possibility of constructing an electroluminescence (EL) device using this material has been suggested by the preliminary results on the EL operation of powder AlN:Mn [4,5]. Moreover, the redorange PL and EL from AlN:Mn films grown on a glass by MOCVD at the substrate temperature lower than the glass softening point of 600 ºC have been observed [6,7]. This means that it is possible to fabricate the large-area EL devices using AlN:Mn on glass.Although the technique of growing AlN:Mn has been developed over several years, the local atomic structure around Mn atoms in the films was not clearly determined. Because the structure strongly affects the Mn-related luminescence mechanism, determining the structure is very important for raising the quantum efficiency of AlN:Mn. Until now, it was thought from a theoretical analysis of the spectroscopic results [2] that Mn 4+ ions are the origin of red-orange PL, CL, and EL in AlN:Mn. To our knowledge, there is no other report on the charge of Mn and the local structure.

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Electron states of manganese luminescence centres in A1N

Cited by 19 publications

References 14 publications

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices

Analysis of the local structure of AlN:Mn using X‐ray absorption fine structure measurements

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