Mn-doped AlN films have been prepared at a substrate temperature of 400°C by metalorganic chemical vapor deposition using bismethylcyclopentadienyl manganese as a Mn source. The Mn concentration in the films (CMn) was controlled extensively in the region from 2×1018to1×1021cm−3. The samples showed red-orange photoluminescence (PL) and cathodoluminescence (CL) originated from the transition of 3d-electrons in Mn ions incorporated in AlN. The maximum emission intensities were observed at different CMn for PL and CL, which was discussed in terms of the excitation mechanism of the Mn center. The electroluminescence (EL) property was also investigated by fabricating thin-film EL devices with the AlN:Mn active layer on glass substrates.
AlN : Mn films with Mn concentrations ranging from 2 × 10 18 to 1 × 10 21 cm -3 have been prepared by metalorganic chemical vapor deposition using bismethylcyclopentadienyl-manganese as a Mn source. The films grown at 1050 °C were polycrystals, whereas those grown at substrate temperatures (T s ) lower than 800 °C were mixture of polycrystalline and amorphous AlN, with the ratio of the latter phase increasing with decreasing T s . The films showed red-orange photoluminescence based on the transitions of d-electrons in Mn 4+ ions at room temperature. The intensity of the Mn-related emission increased with decreasing T s . The T s dependence of PL was discussed in conection with the structual properties of the films. The electroluminescence (EL) properties were also investigated by fabricating thin film EL devices on glass substrates. . However, Mn-related visible luminescence has not been reported for the films grown at substrate temperatures (T s ) lower than 600 °C, where glass substrates are available.In this paper, we report preparation of AlN:Mn films by MOCVD using bismethylcyclopentadienylmanganese [(CH 3 C 5 H 4 ) 2 Mn, abbreviated as (MeCp) 2 Mn] as a Mn source. The characterization of photoluminescence (PL) focusing on the T s dependence has revealed that even the film grown at 400 °C shows bright PL at room temperature. We also demonstrate the thin film EL (TFEL) operation by fabricating the devices consisting of the AlN:Mn active layer for the first time.
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