Electron Multiplication in Silicon and Germanium

McKay, K. G.; McAfee, K. B.

doi:10.1103/physrev.91.1079

Cited by 310 publications

(64 citation statements)

References 9 publications

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“…13,14 The breakdown of p-n junctions in silicon is usually characterized by microplasma currents, 15,16 which are often accompanied by the emission of light. [3][4][5] As shown in Fig.…”

Section: A Light Emission From Reverse-biased P-n Junctionsmentioning

confidence: 99%

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen.

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“…13,14 The breakdown of p-n junctions in silicon is usually characterized by microplasma currents, 15,16 which are often accompanied by the emission of light. [3][4][5] As shown in Fig.…”

Section: A Light Emission From Reverse-biased P-n Junctionsmentioning

confidence: 99%

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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“…2 The results of the measurements of charge collection efficiency vs angle of incidence at 5 volts for the five types of structures (n-and p-type substrate; bulk, and 5-and 3-micrometer epitaxial) are shown in Figs. [3][4][5][6][7]. For the bulk p-type *Note that this figure is for 2 MeV helium ions unlike the rest of the helium ion data in this work which is 3 MeV.…”

Section: Introductionmentioning

confidence: 93%

Charge Collection in Test Structures

Campbell

Knudson

Shapiro

et al. 1983

IEEE Trans. Nucl. Sci.

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“…The reason being that multiplication of photocurrents only, could remove the need for the photo-transistor's continuous, optically modulated, emitter-collector current. The paper by McKay and McAfee in 1953 [60] is key as multiplication in slightly wider p-n junctions than previously studied [54], is attributed to an avalanche ionisation effect similar to Townsend avalanche [19,20]. Indeed in 1967, Emmons [61] noted that this was the first time that Townsend's avalanche theory was applied to the direct-current (DC) analysis of p-n junction multiplication behaviour.…”

Section: Early Transistor and Microplasma History (1950-1959)mentioning

confidence: 99%

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

Fisher¹

2018

Photon Counting - Fundamentals and Applications

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The historical development of technology can inform future innovation, and while theses and review articles attempt to set technologies and methods in context, few can discuss the historical background of a scientific paradigm. In this chapter, the nature of the photon is discussed along with what physical mechanisms allow detection of single-photons using solid-state semiconductor-based technologies. By restricting the scope of this chapter to near-infrared, visible and near-ultraviolet detection we can focus upon the internal photoelectric effect. Likewise, by concentrating on single-photon semiconductor detectors, we can focus upon the carrier-multiplication gain that has allowed sensitivity to approach the single-photon level. This chapter and the references herein aim to provide a historical account and full literature review of key, early developments in the history of photodiodes (PDs), avalanche photodiodes (APDs), single-photon avalanche diodes (SPADs), other Geiger-mode avalanche photodiodes (GM-APDs) and silicon photo-multipliers (Si-PMs). As there are overlaps with the historical development of the transistor (1940s), we find that development of the p-n junction and the observation of noise from distinct crystal lattice or doping imperfections -called "microplasmas" -were catalysts for innovation. The study of microplasmas, and later dedicated structures acting as known-area, uniform-breakdown artificial microplasmas, allowed the avalanche gain mechanism to be observed, studied and utilised.

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Electron Multiplication in Silicon and Germanium

Cited by 310 publications

References 9 publications

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Charge Collection in Test Structures

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

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