Charge Collection in Test Structures

Campbell, A.B.; Knudson, A.R.; Shapiro, P.; Patterson, David O.; Seiberling, L. E.

doi:10.1109/tns.1983.4333159

Cited by 30 publications

(4 citation statements)

References 14 publications

(5 reference statements)

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“…Silicon drift detectors (SDD), invented in 1984 by , are also proposed for roomtemperature spectroscopic X-ray imaging, representing the best solution up to 20 keV (Bertuccio et al, 2015). Despite their excellent energy resolution and high detection efficiency, few ERPC prototypes based on high-purity germanium (HPGe) detectors have been developed, mainly due to their cumbersome cryogenic cooling (liquid and mechanical coolers) and the difficulties in fabricating small pixel devices (Johnson et al, 2015;Campbell et al, 2013;Krings et al, 2015).…”

Section: Introductionmentioning

confidence: 99%

Digital fast pulse shape and height analysis on cadmium–zinc–telluride arrays for high-flux energy-resolved X-ray imaging

et al. 2018

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Cadmium-zinc-telluride (CZT) arrays with photon-counting and energy-resolving capabilities are widely proposed for next-generation X-ray imaging systems. This work presents the performance of a 2 mm-thick CZT pixel detector, with pixel pitches of 500 and 250 µm, dc coupled to a fast and low-noise ASIC (PIXIE ASIC), characterized only by the preamplifier stage. A custom 16-channel digital readout electronics was used, able to digitize and process continuously the signals from each output ASIC channel. The digital system performs on-line fast pulse shape and height analysis, with a low dead-time and reasonable energy resolution at both low and high fluxes. The spectroscopic response of the system to photon energies below (Cd source) and above (Am source) the K-shell absorption energy of the CZT material was investigated, with particular attention to the mitigation of charge sharing and pile-up. The detector allows high bias voltage operation (>5000 V cm) and good energy resolution at moderate cooling (3.5% and 5% FWHM at 59.5 keV for the 500 and 250 µm arrays, respectively) by using fast pulse shaping with a low dead-time (300 ns). Charge-sharing investigations were performed using a fine time coincidence analysis (TCA), with very short coincidence time windows up to 10 ns. For the 500 µm pitch array (250 µm pitch array), sharing percentages of 36% (52%) and 60% (82%) at 22.1 and 59.5 keV, respectively, were measured. The potential of the pulse shape analysis technique for charge-sharing detection for corner/border pixels and at high rate conditions (250 kcps pixel), where the TCA fails, is also shown. Measurements demonstrated that significant amounts of charge are lost for interactions occurring in the volume of the inter-pixel gap. This charge loss must be accounted for in the correction of shared events. These activities are within the framework of an international collaboration on the development of energy-resolved photon-counting systems for high-flux energy-resolved X-ray imaging (1-140 keV).

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Section: Introductionmentioning

confidence: 99%

Digital fast pulse shape and height analysis on cadmium–zinc–telluride arrays for high-flux energy-resolved X-ray imaging

et al. 2018

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“…Initial charge collection measurements were performed on diffused junction and MOS capacitor structures [1,2,3].…”

Section: Introductionmentioning

confidence: 99%

Charge Collection in Bipolar Transistors

Knudson

Campbell

1987

IEEE Trans. Nucl. Sci.

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Charge collection measurements on bipolar test structures have shown the presence of a charge transfer process, that has been referred to as the ion shunt effect. This process had been previously seen in CMOS test structures. The transfer of charge from the emitter to the collector has been demonstrated to be a localized effect requiring that the ion track pass through both the emitter and collector. Measurements performed on transistors with and without a buried oxide layer showed large differences in charge collection.

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“…Diffusion effects could be the source of the apparently large collection depths derived from the experimental data. Both experimental [14] and theoretical [ 15,161 work suggest that diffusion processes in epitaxial silicon devices can make a significant contribution to the charge collected at a sensitive node, and that the charge collection depth may be significantly deeper than the epitaxial width. To our knowledge, the extent to which diffusion processes affect the SEU characteristics of the 93L422 has not been directly measured.…”

Section: A Silicon Srammentioning

confidence: 99%

Investigations of single-event upsets and charge collection in micro-electronics using variable-length laser-generated charge tracks

Melinger¹,

McMorrow²,

Buchner³

et al.

RADECS 97. Fourth European Conference on Radiation and Its Effects on Components and Systems (Cat. No.97TH8294)

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In this paper we examine how single-event upsets (SEU) and related charge collection characteristics in microelectronic circuits and devices depend on the depth of charge deposited by a picosecond laser pulse. Charge tracks of variable length are generated by tuning the laser wavelength through the semiconductor absorption spectrum. Our results show that the variable-length charge tracks provide a unique and sensitive probe of the charge collection volume of a micro-electronic circuitldevice. In favorable cases we show how the wavelength tunability of the laser can be used to provide an experimental estimate of the charge collection depth.

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Charge Collection in Test Structures

Abstract: Charge collection processes have been studied as a function of ion type and incident angle of the impinging ion on silicon diffused junction structures on various epitaxial layer thicknesses.

Cited by 30 publications

References 14 publications

Digital fast pulse shape and height analysis on cadmium–zinc–telluride arrays for high-flux energy-resolved X-ray imaging

Digital fast pulse shape and height analysis on cadmium–zinc–telluride arrays for high-flux energy-resolved X-ray imaging

Charge Collection in Bipolar Transistors

Investigations of single-event upsets and charge collection in micro-electronics using variable-length laser-generated charge tracks

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