Electron microscopic characterization of reactively sputtered ZnO films with different Al-doping levels

Structures and Textures of Transparent Conducting Pulsed Laser Deposited In2O3–ZnO Thin Films Revealed by Transmission Electron Microscopy

“…3f, 3g, 3h) similar to that of the pure zinc oxide (26). The bright-"eld image obtained from the x"0.92 sample (Fig.…”

Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents

“…The bright-field image ( figure 4(b)) shows the dominant crystallographic defect of stacking fault in the Al 2 O 3 -doped ZnO. It has been reported that the incorporation of group-III or group-V dopants into the matrix apparently increases the tendency to create stacking fault resulting from the dislocation or the lattice misfit (Lin et al 2009;Sieber et al 1998;Thonke et al 2009;Liu et al 2010). Compared with the undoped and doped ZnO, the 2·5 wt.% Al 2 O 3 doped ZnO has a lower density than the others, indicating that the sintered bulks contain more pores, as shown in figure 2(d).…”

“…In general, the electrical properties of AZO ceramics are quite related to the microstructures, which might be governed by crystallographic defects, e.g. grain boundary, stacking fault, twin, and dislocation (Sieber et al 1998;Lin et al 2009;Thonke et al 2009;Liu et al 2010). The bright-field image ( figure 4(b)) shows the dominant crystallographic defect of stacking fault in the Al 2 O 3 -doped ZnO.…”

Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

“…Al acts as a donor when it is substitutionally incorporated on zinc lattice sites [23]. Accordingly, Musat et al [24] fabricated low resistivity Al doped ZnO films when segregation of aluminum (as Al 2 O 3 ) at the grain boundaries was avoided.…”