Structures and Textures of Transparent Conducting Pulsed Laser Deposited In2O3–ZnO Thin Films Revealed by Transmission Electron Microscopy

Dupont, L.; Maugy, C; Naghavi, Negar; Guéry, Claude; Tarascon, Jean‐Marie

doi:10.1006/jssc.2000.9059

Cited by 42 publications

(25 citation statements)

References 23 publications

(6 reference statements)

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“…[24] Although the diffraction patterns of these Zn-rich films cannot be indexed to the series of homologous Zn k In 2 O kþ3 compounds, the variation in the measured lattice spacing with increase in In content does agree well with to that reported for the Zn k In 2 O kþ3 series which is shown for k ¼ 1 to 29 in Figure 2b using a dotted line. [25] For the In-rich films, the measured lattice constant for the as-deposited crystalline IZO films is larger than that for unstrained In 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

Taylor

Readey

Hest

et al. 2008

Adv Funct Materials

162

122

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Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic cells, low‐e windows, flat panel displays, electrochromic devices, and flexible electronics. The conventional TCOs, such as Sn‐doped In2O3, are crystalline single phase materials. Here, we report on In‐Zn‐O (IZO), a compositionally tunable amorphous TCO with some significantly improved properties. Compositionally graded thin film samples were deposited by co‐sputtering from separate In2O3 and ZnO targets onto glass substrates at 100 °C. For the metals composition range of 55–84 cation% indium, the as‐deposited IZO thin films are amorphous, smooth (RRMS < 0.4 nm), conductive (σ ∼ 3000 Ω−1 · cm−1), and transparent in the visible (TVis > 90%). Furthermore, the amorphous IZO thin films demonstrate remarkable functional and structural stability with respect to heating up to 600 °C in either air or argon. Hence, though not completely understood at present, these amorphous materials constitute a new class of fundamentally interesting and technologically important high performance transparent conductors.

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Section: Resultsmentioning

confidence: 99%

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

Taylor

Readey

Hest

et al. 2008

Adv Funct Materials

162

122

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“…[7] These values for layer separation also agree reasonably with those extrapolated and proposed for the Zn k In 2 O k þ 3 homologous compounds for k ¼ 1 to k ¼ 29, which are shown as a dashed line in Figure 3. [8] However, we believe it is unlikely that a true series of these compounds formed in our films because of the low deposition temperature of 100 8C, which would inhibit the migration of indium ions necessary to form widely separated InO 2 À layers. Figure 4 illustrates the change in mobility, carrier concentration, and conductivity as a function of indium content for the 1 cm 2 samples cut from equivalent compositional libraries.…”

Section: Resultsmentioning

confidence: 99%

“…The dashed line shows the caxis interatomic layer spacing of the Zn k In 2 O k þ 3 homologous compounds [8]. …”

mentioning

confidence: 99%

Combinatorial Growth and Analysis of the Transparent Conducting Oxide ZnO/In (IZO)

Taylor

Readey

Teplin

et al. 2003

Macromol. Rapid Commun.

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Summary: Compositionally graded, combinatorial libraries of indium‐doped zinc oxide (IZO) were grown by DC‐magnetron sputtering on glass at 100 °C. The In content ranged from 5 to 50 cation‐%. The highest conductivity, σ = 2 000 Ω−1 · cm−1 with μ = 25 cm2 · V−1 · s−1, was found at ≈50% In content with a visible transmittance greater than 80%. The (00l) layer spacing increased from ≈2.6 to 2.85 Å as the In content increased from 5 to 50%.Conductivity as a function of indium content for the three In‐Zn‐O transparent conducting oxide libraries studied here.magnified imageConductivity as a function of indium content for the three In‐Zn‐O transparent conducting oxide libraries studied here.

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“…But for intermediaries concentrations (0.20 \ x \ 0.70), where the films present a fibber texture (Fig. 7b), with a layered Zn k In 2 O k?3 -type structure as was shown by Dupont et al (2001), which facilitates electron mobility (Moriga et al (1999), conductivity arises and reaches maximum at the homologous phase Zn 2 In 2 O 5 . We can note that the best conductivity and mobility are reached for the sample with x = 0.50.…”

Section: Electrical Propertiesmentioning

confidence: 89%

Preparation and characterization of highly transparent and conductive indium-zinc oxide thin films deposited by pyrolysis spray technique

Dounia¹,

Migalska‐Zalas²,

Addou³

et al. 2016

Opt Quant Electron

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Ternary compound films of ZnO-In 2 O 3 system were prepared by spray pyrolysis method. The films were deposited on heated glass substrates by pyrolytic decomposition of zinc chloride and indium chloride in distilled water with different ratio x of [Zn] In]). The phase change, chemical composition, electrical and optical properties of the Zn-In oxides were investigated over wide range of ratio x. Quasi-amorphous sub-oxide films with thickness of 200-400 nm were first obtained, the films were then annealed in Argon atmosphere at 550°C for 1 h. To optimize the physical properties of sprayed ZnO-In 2 O 3 thin films, we carry out on a systematic study of their microstructural characterization and transport properties. Continuous

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Structures and Textures of Transparent Conducting Pulsed Laser Deposited In2O3–ZnO Thin Films Revealed by Transmission Electron Microscopy

Cited by 42 publications

References 23 publications

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

Combinatorial Growth and Analysis of the Transparent Conducting Oxide ZnO/In (IZO)

Preparation and characterization of highly transparent and conductive indium-zinc oxide thin films deposited by pyrolysis spray technique

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