Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

“…Indeed, there are some explanations about the formation of the c-axis orientation; for example, the c-axis orientation occurs due to a minimization of internal stress and surface free energy [1] and the c-axis orientation could also result from an easy growth because of the highest atomic density along (0 0 2) plane [15]. In this study, we described the formation of c-axis orientation according to the study of Oral et al [16]. The growth along c-axis was slowed down or inhibited when [0 0 1] directions of growing crystals merged.…”

Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition

“…Impurity-doped ZnO thin films have been prepared by various techniques such as thermal evaporation [14], magnetron sputtering [15,16], spray pyrolysis [17,18], chemical vapor deposition (CVD) [19][20][21], pulsed laser deposition [22][23][24], molecular beam epitaxy [25] and sol-gel processing [26,[27][28][29]30]. Pulsed laser deposition has advantages in target fabrication and keeping the composition of films coinciding with the target.…”

Development on transparent conductive ZnO thin films doped with various impurity elements

“…Oral et al demonstrated this by the blue shift of the E g value they observed after Li doping into the ZnO thin films, which suggested the increase of n-type carrier concentration and that most of Li ions must be incorporated as interstitial donors. In fact, some Li atoms in interstitial sites may later replace Zn atoms as follows: [45].…”