The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

Ratana, T.; Amornpitoksuk, Pongsaton; Suwanboon, Sumetha

doi:10.1016/j.jallcom.2008.02.081

Cited by 81 publications

(45 citation statements)

References 23 publications

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“…This value is higher than that reported by Keskenler et al 10 , Marotti et al 33 , and Srinivasan and Kumar, 34 who found the optical band gap of ZnO film on p-type silicon prepared by sol-gel spin coating was 3.27 eV. Ratana et al 35 reported a higher optical band gap, 3.70 eV, for a ZnO thin film. Optical band gaps of ZnO comparable with our value have been reported for nanopowders and bulk ZnO.…”

Section: Uv-visible Studymentioning

confidence: 57%

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Kumar

Chand

2014

Journal of Elec Materi

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For heterojunction fabrication, zinc oxide thin films were grown on p-Si by pulsed laser deposition. X-ray diffraction patterns were used to study the grain size and morphology of the films. The optical properties of the films were studied by UV-visible and photoluminescence spectroscopy. Experimental observations confirmed that the deposited films have potential for sharp emission in the visible region. High-purity (99.999%) vacuum evaporated aluminium metal was used to make contacts to the n-ZnO and p-Si. The current-voltage characteristics of the Al/n-ZnO/p-Si(100)/Al heterostructure measured over the temperature range 60-300 K were studied on the basis of the thermionic emission diffusion mechanism. The equivalent Schottky barrier height and the diode ideality factor were determined by fitting measured current-voltage data to the thermionic emission diffusion equation. It was observed that the barrier height decreased and the ideality factor increased with decreasing temperature, and that the activation energy plot was nonlinear at low temperature. These characteristics are attributed to the Gaussian distribution of barrier heights. The capacitance-voltage characteristics of the Al/n-ZnO/p-Si(100)/Al heterostructure diode were studied over a wide temperature range. The impurity concentration in deposited n-type ZnO films was estimated from measured capacitance-voltage data.

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Section: Uv-visible Studymentioning

confidence: 57%

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Kumar

Chand

2014

Journal of Elec Materi

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“…They found the optical band gap of ZnO film on p-type silicon prepared with solgel spin coating method to be equal to 3.27 eV. Ratana et al [29] has reported higher optical band gap of ZnO thin film to be 3.70 eV. The optical band gap of ZnO comparable to these values are also reported for nanopowders as well as bulk ZnO materials [30].…”

Section: Energy Band Gap Evaluationmentioning

confidence: 83%

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Kumar

Chand

2014

J Mater Sci: Mater Electron

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The Ag/n-ZnO/p-Si(100)/Al heterojunction diodes were fabricated by pulsed laser deposition of zinc oxide (ZnO) thin films on p-type silicon. The X-ray diffraction analysis shows the formation of ZnO thin film with hexagonal structure having strong (002) plane as preferred orientation. The energy band gap of ZnO films simultaneously deposited on quartz substrate was calculated from the measured UV-Visible transmittance spectra. High purity vacuum evaporated silver and aluminum thin films were used to make contacts to the n-ZnO and p-silicon, respectively. The current-voltage and capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterostructures were measured over the temperature range of 80-300 K. The Schottky barrier height and ideality factor were determined by fitting of the measured current-voltage data into thermionic emission diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. This decrease in barrier height and increase in ideality factor at low temperature are attributed to the occurrence Gaussian distribution of barrier heights. The capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterojunction diode were also studied over the wide temperature range. Capacitance-voltage data are used to estimate the barrier height and impurity concentration in n-type ZnO.

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“…One can observe that the optical transparency gradually decreases with the increase of ZnO target power. The red shift of the transmittance edge to a higher wavelength at a ZnO target power of 200 W is the overall result of two counteracting effects: Burstein-Moss bandgap widening and many-body bandgap narrowing due to electron-electron and electron-impurity interactions [33].…”

Section: Effect Of Zno Target Power On the Fabrication Of Zno:al Nanomentioning

confidence: 99%

High-rate, room temperature plasma-enhanced deposition of aluminum-doped zinc oxide nanofilms for solar cell applications

Chua

Ren

et al. 2009

Journal of Alloys and Compounds

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The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

Cited by 81 publications

References 23 publications

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

High-rate, room temperature plasma-enhanced deposition of aluminum-doped zinc oxide nanofilms for solar cell applications

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