Pt ∕ Ti O 2 ∕ Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent (PC) in a wide temperature range. The compact TiO2 as well as the SiO2 passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2–1.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991)]. Space-charge-limited currents under the presence of defects with an exponential distribution were observed. Under zero-potential condition, the PC transients were practically independent of temperature and the electron drift mobility amounted to 2×10−4cm2∕(Vs). A screening dipole layer at the Pt∕TiO2 junction was formed under low forward and reverse potentials. Defects were generated under electron injection.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.