1982
DOI: 10.1016/0378-5963(82)90148-9
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Electron energy loss and Auger electron spectroscopy of ultrathin oxide films on silicon obtained in rf oxygen plasma

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1983
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Cited by 14 publications
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“…Differences in the oxidation of Si(lll)-7 X 7 and Si(lll)-2 X 1 surfaces have been ascertained by UPS (870, 872). From AES and EELS studies of plasma-produced thin oxide films on silicon, it was concluded that the oxide properties depend slightly on the discharge parameters (35). The chemical structure of trapped charge sites formed at the silicon-silicon dioxide interface was investigated by XPS (356).…”
Section: Semiconductorsmentioning
confidence: 99%
“…Differences in the oxidation of Si(lll)-7 X 7 and Si(lll)-2 X 1 surfaces have been ascertained by UPS (870, 872). From AES and EELS studies of plasma-produced thin oxide films on silicon, it was concluded that the oxide properties depend slightly on the discharge parameters (35). The chemical structure of trapped charge sites formed at the silicon-silicon dioxide interface was investigated by XPS (356).…”
Section: Semiconductorsmentioning
confidence: 99%