Plasma nitridation of thin SiO2 films: AES, ELS and IR study

Atanassova, E.; Popova, L.

doi:10.1016/0022-3115(93)90320-x

Cited by 1 publication

(1 citation statement)

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“…Higuchi et al also reported that high-quality Si 3 N 4 film in a thickness < 5 nm was formed by nitridation of the Si(110) surface at 600 • C using radical NH [5]. Also, nitridation of Si(110) under RF plasma and the thermal process forms a very thin (1011) α-Si 3 N 4 epitaxial layer [37]. In contrast, the present work shows that on Si (110), the α-Si 3 N 4 microfibers only align along with the single direction of Si [110] after nitridation by microwave plasma.…”

Section: Discussionmentioning

confidence: 99%

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

Chiu

Dung

et al. 2021

Coatings

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Plasma nitridation of an amorphous SiO2 layer on Si (110) substrate can form well-aligned α-Si3N4 crystallites in fibrous morphology. Nitriding is performed at a temperature in the range of 800–1000 °C by using microwave plasma with a gas mixture of N2 and H2. Raman spectroscopy shows the characteristics of an α-Si3N4 phase without other crystalline nitrides. As shown by scanning electron microscopy, the formed α-Si3N4 microfibers on the Si substrate can be in a dense and straight array nearly along with Si <11¯0>, and can have a length over 2 mm with a diameter in the range of 5–10 μm. Structural characterization of scanning transmission electron microscopy in cross section view reveals that the elongated α-Si3N4 crystallites are formed on the surface of the nitrided SiO2/Si (110) substrate without any interlayers between Si3N4 and Si, and the longitudinal direction of α-Si3N4 appears mainly along <112¯0>, which is approximately parallel to Si <11¯0>.

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Section: Discussionmentioning

confidence: 99%