Electron-beam lithography on multilayer substrates: experimental and theoretical study

Raptis, Ioannis; Meneghini, G.; Rosenbusch, Anja; Γλέζος, Ν.; Palumbo, R.; Ardito, M.; Scopa, L.; Patsis, G. P.; Valamontes, E.; Argitis, Panagiotis

doi:10.1117/12.309597

Cited by 6 publications

(6 citation statements)

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“…A significant amount of research effort has been applied worldwide in the development of fast and accurate e-beam lithography simulation algorithms. In all cases [14,15] the simulation strategy is organized into three modules:…”

Section: Simulation Strategymentioning

confidence: 99%

“…This simulation flowchart is applied when conventional resists such as PMMA (polymethylmethacrylate) are considered. In the case of lithographic materials based on the chemical amplification mechanism, one more module (before or after the EDF(r, z) convolution) for the simulation of post-exposure baking is applied [15]. The simulation tools developed so far (commercial and/or research) have been applied extensively in the case of Si substrates, in most cases with success.…”

Section: Simulation Strategymentioning

confidence: 99%

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Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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High temperature superconducting (HTS) devices offer significant performance (higher signal to noise ratio, sensitivity etc) improvement over conventional devices, becoming more prominent when device dimensions are scaled down. A typical technology for the fabrication of devices with very small critical dimensions is electron beam lithography. In the current work, a detailed study of the electron beam lithography process is presented using two simulation methods: one based on Monte Carlo simulation and one based on the Boltzmann transport equation. Simulation energy deposition results are compared with experimental ones in the case of Si and superconducting substrates for the first time, with satisfactory agreement found. The experimental data for statistical distributions of the scattered electrons were calculated in the case of an epoxy based chemically amplified resist film deposited on Si and on Y Ba2Cu3O7−δ/SrTiO3. The substrate strongly influences the distribution of the backscattered electrons due to the different effective atomic number and the mass densities of the substrate and YBCO layer are studied. It is shown that the decrease of the effective atomic numbers of the substrates (MgO and SrTiO3 in comparison with YBCO) leads to an increase in the external proximity effect obtained in regions far from the point of beam incidence on the resist (2 µm for 25 keV and 10–11 µm for 75 keV in the case of MgO). On MgO and SrTiO3 substrates the proximity effect is lower than on YBCO substrate (bulk YBCO) in regions near to the point of beam incidence. Using simulation tools, accurate prediction of final resist profiles (after development) over a wide exposure dose range of dense sub-quarter-micron structures is performed for both Si and superconducting substrates.

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Section: Simulation Strategymentioning

confidence: 99%

Section: Simulation Strategymentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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“…Two different modules for the energy deposition calculation EDF(r,z) are applied in the case of Si and HTS films. The first module is based on the MC algorithm (Vutova & Mladenov, 1994;Gueorguiev et al, 1998) and the second based on an analytical solution of the Boltzmann transport equation (AS) (Raptis et al, 1998). Comparison between these approaches for various energies and substrates was performed in order to test the adequacy of calculated set of data.…”

Section: Comparison Of Simulated Results With Experimental Datamentioning

confidence: 99%

“…The main goal during the exposure process modeling is the calculation of the absorbed energy space distribution. There exist two types of method to calculate the deposited energy in the resist (latent image): analytical methods (Hatzakis et al, 1974;Hawryluk et al, 1974;Raptis et al, 1998) and numerical methods (Kyser & Murata, 1974;Adesida et al, 1979;Vutova & Mladenov, 1994). The analytical method is based on some particular approximations that simplify the nature of the real process (small-angle and diffusion particle scattering, single-component targets, point source or source of homogeneous cross section, etc).…”

Section: Deposited Energy In the Case Of Electron Beam Lithography Simentioning

confidence: 99%

Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 1: Exposure Modeling at Electron and Ion Beam Lithography

Vutova¹,

Mladenov²

2010

Lithography

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“…For the calculation of energy deposition in the resist film two approaches were applied: a Monte Carlo (MC) [11][12][13] and an analytical solution based on the Boltzmann transport equation (AS) [14][15][16]. Comparison between these approaches for various energies and substrates was performed in order to identify any differences.…”

Section: Exposure Simulationmentioning

confidence: 99%

Process simulation at electron beam lithography on different substrates

Vutova

Mladenov

Raptis

et al. 2007

Journal of Materials Processing Technology

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Electron-beam lithography on multilayer substrates: experimental and theoretical study

Cited by 6 publications

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Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 1: Exposure Modeling at Electron and Ion Beam Lithography

Process simulation at electron beam lithography on different substrates

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