Articles you may be interested inDetailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in In P ∕ In Ga As P Reactive ion etching ͑RIE͒ processes have been evaluated in terms of material damage introduced and effect on device performance. We have evaluated the damage introduced in the InP / InGaAsP material system, in terms of surface damage depth, by various RIE-related etching processes ͑based on CH 4 /H 2 chemistry͒ and we have fabricated complete Fabry-Perot laser diode devices to evaluate the effect of RIE-induced damage on device performance. Electrical, optical, and reliability performance results are presented for the laser diode devices. A comparison between the laser device performance and the related surface damage depth is presented and discussed. It has been shown that a correlation exists between RIE-induced damage and optoelectronic device performance. By carefully designing RIE-related processes, which introduce low material damage, good optoelectronic device performance can be realized coupled with high device reliability.
The elastic compliances of PbFz have been determined using the composite oscillator technique on a set of five single-crystal specimens. The values obtained are s11= 1.534, -slz=0.49 and s44=4.756 (10-l2 cm2 dyn-l).
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